Journal of Materiomics ( IF 8.4 ) Pub Date : 2023-12-12 , DOI: 10.1016/j.jmat.2023.11.013 Hezhang Li , Kei Hayashi , Zhicheng Huang , Hiroto Takeuchi , Gakuto Kanno , Jing-Feng Li , Yuzuru Miyazaki
A half-metallic full-Heusler Mn2VAl alloy is a potential p-type thermoelectric material that can directly generate electricity from waste heat via the Seebeck effect. For practical use, the Seebeck coefficient S of Mn2VAl should be increased while maintaining a high electrical conductivity σ from its half-metallic character. Herein, we achieved this objective through antisite defect engineering. Theoretically, it was predicted that the S was maximized by regulating partial density of states of majority-spin sp-electrons through the control of the fraction of antisite defect, fAD, between V and Al atoms in Mn2VAl. Experimentally, a significant increase in S and a slight decrease in σ were observed for an Mn2VAl sample with an optimal fAD = 33 %, enhancing the thermoelectric power factor PF by 2.7 times from an Mn2VAl sample with fAD = 14 %. Furthermore, we combined the antisite defect engineering with a partial substitution method. An Mn2V(Al0.96Si0.04) sample with fAD = 33 % exhibited the highest PF = 4.5×10−4 W m−1 K−2 at 767 K among the samples. The maximum dimensionless figure-of-merit zT of the Mn2V(Al0.96Si0.04) sample with fAD = 33 % was measured to be 3.4×10−2 at 767 K, which is the highest among the p-type half-metallic full-Heusler alloys.
中文翻译:
通过反位缺陷工程和 Si 部分替代增强半金属全高斯勒 Mn2VAl 合金的热电性能
半金属全Heusler Mn 2 VAl合金是一种潜在的p型热电材料,可以通过塞贝克效应直接利用废热发电。在实际应用中,应提高Mn 2 VAl的塞贝克系数S,同时保持其半金属特性的高电导率σ。在这里,我们通过反现场缺陷工程实现了这一目标。理论上,预测通过控制 Mn < 中 V 和 Al 原子之间的反位缺陷分数 f AD 来调节多数自旋 sp 电子态的部分密度,从而使 S 最大化。 b3> VA1。实验中,观察到最佳 f AD = 33 % 的 Mn 2 VAl 样品的 S 显着增加,而 σ 略有下降,热电功率因数 PF 提高了 2.7 f AD = 14 % 的 Mn 2 VAl 样品的倍数。此外,我们将反位点缺陷工程与部分替换方法相结合。 f AD = 33 % 的 Mn 2 V(Al 0.96 Si 0.04 ) 样品表现出最高的 PF = 4.5×10 <样品中 b12> W m −1 K −2 在 767 K 处。 f AD = 33 时 Mn 2 V(Al 0.96 Si 0.04 ) 样品的最大无量纲品质因数 zT 767 K 时测得 % 为 3.4×10 −2 ,这是 p 型半金属全霍斯勒合金中最高的。