2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy,ACS Applied Materials & Interfaces

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2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-12-12 , DOI: 10.1021/acsami.3c14076
Hoe-Min Kwak ₁ , Jongil Kim ₂ , Je-Sung Lee ₁ , Jeongwoon Kim ₁ , Jaeyoung Baik ₁ , Soo-Young Choi ₁ , Sunwoo Shin ₁ , Jin-Soo Kim ₁ , Seung-Hyun Mun ₁ , Kyung-Pil Kim ₁ , Sang Ho Oh ₂ , Dong-Seon Lee _{1,

3}

Affiliation

The production of freestanding membranes using two-dimensional (2D) materials often involves techniques such as van der Waals (vdW) epitaxy, quasi-vdW epitaxy, and remote epitaxy. However, a challenge arises when attempting to manufacture freestanding GaN by using these 2D-material-assisted growth techniques. The issue lies in securing stability, as high-temperature growth conditions under metal–organic chemical vapor deposition (MOCVD) can cause damage to the 2D materials due to GaN decomposition of the substrate. Even when GaN is successfully grown using this method, damage to the 2D material leads to direct bonding with the substrate, making the exfoliation of the grown GaN nearly impossible. This study introduces an approach for GaN growth and exfoliation on 2D material/GaN templates. First, graphene and hexagonal boron nitride (h-BN) were transferred onto the GaN template, creating stable conditions under high temperatures and various gases in MOCVD. GaN was grown in a two-step process at 750 and 900 °C, ensuring exfoliation in cases where the 2D materials remained intact. Essentially, while it is challenging to grow GaN on 2D material/GaN using only MOCVD, this study demonstrates that with effective protection of the 2D material, the grown GaN can endure high temperatures and still be exfoliated. Furthermore, these results support that vdW epitaxy and remote epitaxy principle are not only possible with specific equipment but also applicable generally.

中文翻译：

MOCVD GaN 模板上二维材料辅助 GaN 生长及其剥离策略

使用二维 (2D) 材料生产独立式薄膜通常涉及范德华 (vdW) 外延、准 vdW 外延和远程外延等技术。然而，当尝试使用这些二维材料辅助生长技术制造独立式 GaN 时，出现了挑战。问题在于确保稳定性，因为金属有机化学气相沉积 (MOCVD) 下的高温生长条件可能会因衬底的 GaN 分解而对 2D 材料造成损坏。即使使用这种方法成功生长 GaN，对 2D 材料的损坏也会导致与衬底直接键合，使得生长的 GaN 几乎不可能剥离。本研究介绍了一种在 2D 材料/GaN 模板上生长和剥离 GaN 的方法。首先，将石墨烯和六方氮化硼 (h-BN) 转移到 GaN 模板上，在 MOCVD 中在高温和各种气体下创造稳定的条件。 GaN 在 750 和 900 °C 下通过两步工艺生长，确保在 2D 材料保持完整的情况下剥离。从本质上讲，虽然仅使用 MOCVD 在 2D 材料/GaN 上生长 GaN 具有挑战性，但这项研究表明，通过对 2D 材料的有效保护，生长的 GaN 可以承受高温并且仍然会剥落。此外，这些结果表明，vdW外延和远程外延原理不仅可以在特定设备上实现，而且可以广泛应用。

更新日期：2023-12-12

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