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Room-Temperature Cubic Ag2S1−2xSexTex with Promising Ductility and Thermoelectric Properties Enabled by Entropy Engineering
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-12-12 , DOI: 10.1002/adfm.202310016
Yi Chang 1 , Zhili Li 1 , Pengfei Luo 1 , Weixiong Qian 1 , Jiye Zhang 1 , Jun Luo 2
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-12-12 , DOI: 10.1002/adfm.202310016
Yi Chang 1 , Zhili Li 1 , Pengfei Luo 1 , Weixiong Qian 1 , Jiye Zhang 1 , Jun Luo 2
Affiliation
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Since the discovery of superior ductility in semiconducting Ag2S at room temperature, Ag2S-based inorganics attract ever-increasing attention as ductile thermoelectrics (TEs) for flexible electronics, while the monoclinic to cubic structure transition near room temperature (≈455 K for Ag2S) of these materials leads to instability of their structures and properties. In this work, single-phase cubic Ag2S1−2xSexTex (x = 0.13–0.33) samples are stabilized at room temperature via entropy engineering. In comparison with pure Ag2S, the random mixing of S, Se, and Te at the anion site results in increased configuration entropy, improved electrical conductivity, decreased lattice thermal conductivity, and thus significantly enhanced TE properties of cubic Ag2S1−2xSexTex samples. By further optimizing the carrier concentration through introducing Ag vacancies, the slightly Ag-deficient Ag1.98S0.34Se0.33Te0.33 sample achieves a power factor of 6.1 µW cm−1 K−2 and a dimensionless figure of merit zT of 0.4 at room temperature. In the measured temperature range of 300–500 K, this cubic sample with excellent ductility shows not only a record average zT value of 0.62 in ductile inorganics but also very stable TE properties, demonstrating the great potential of entropy engineering in the design of high-performance ductile TE inorganics.
中文翻译：
熵工程实现的室温立方 Ag2S1−2xSexTex 具有良好的延展性和热电性能
自从发现半导体 Ag 2 S 在室温下具有优异的延展性以来，Ag 2 S 基无机材料作为柔性电子器件的延性热电材料 (TE) 受到越来越多的关注，而在室温附近（约 455 K），单斜晶向立方结构转变这些材料的Ag 2 S）导致其结构和性能不稳定。在这项工作中，单相立方 Ag 2 S 1−2 x Se x Te x ( x = 0.13–0.33) 样品通过熵工程在室温下稳定。与纯Ag 2 S相比，S、Se和Te在阴离子位点的随机混合导致构型熵增加，电导率提高，晶格热导率降低，从而显着增强了立方Ag 2 S 1−的TE性能2 x性别x性别样本。通过引入Ag空位进一步优化载流子浓度，轻微缺Ag的Ag 1.98 S 0.34 Se 0.33 Te 0.33样品 在室温下实现了6.1 µW cm -1 K -2的功率因数和0.4的无量纲品质因数zT。在300-500 K的测量温度范围内，这种具有优异延展性的立方体样品不仅在延展性无机材料中表现出创纪录的平均zT值0.62，而且还具有非常稳定的TE性能，展示了熵工程在高能材料设计中的巨大潜力。高性能延展性 TE 无机物。
更新日期：2023-12-12
中文翻译：
熵工程实现的室温立方 Ag2S1−2xSexTex 具有良好的延展性和热电性能
自从发现半导体 Ag 2 S 在室温下具有优异的延展性以来，Ag 2 S 基无机材料作为柔性电子器件的延性热电材料 (TE) 受到越来越多的关注，而在室温附近（约 455 K），单斜晶向立方结构转变这些材料的Ag 2 S）导致其结构和性能不稳定。在这项工作中，单相立方 Ag 2 S 1−2 x Se x Te x ( x = 0.13–0.33) 样品通过熵工程在室温下稳定。与纯Ag 2 S相比，S、Se和Te在阴离子位点的随机混合导致构型熵增加，电导率提高，晶格热导率降低，从而显着增强了立方Ag 2 S 1−的TE性能2 x性别x性别样本。通过引入Ag空位进一步优化载流子浓度，轻微缺Ag的Ag 1.98 S 0.34 Se 0.33 Te 0.33样品 在室温下实现了6.1 µW cm -1 K -2的功率因数和0.4的无量纲品质因数zT。在300-500 K的测量温度范围内，这种具有优异延展性的立方体样品不仅在延展性无机材料中表现出创纪录的平均zT值0.62，而且还具有非常稳定的TE性能，展示了熵工程在高能材料设计中的巨大潜力。高性能延展性 TE 无机物。
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