<br>通过叉指结构增强 GaN/Ga2O3 PN 结 UVc 光电探测器的性能,Small Methods

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通过叉指结构增强 GaN/Ga2O3 PN 结 UVc 光电探测器的性能
Small Methods ( IF 10.7 ) Pub Date : 2023-12-10 , DOI: 10.1002/smtd.202301148
Ziling Cai ₁ , Xiyao He ₁ , Kaikai Wang ₁ , Xin Hou ₁ , Yang Mei ₁ , Leiying Ying ₁ , Baoping Zhang ₁ , Hao Long ₁

Affiliation

Ga ₂ O ₃基紫外-C光电探测器(UVCPD)被认为是目前最有前途的UVCPD，分为金属-半导体-金属(MSM)和PN结类型。与 MSM-PD 相比，PN-PD 由于内置电场而表现出优越的瞬态性能。然而，当前基于Ga ₂ O ₃的PN-PD缺乏对载流子收集和电场分布的考虑。在这项研究中，具有叉指n-Ga ₂ O ₃层和指状电极的PN-PD是在p-GaN/n-Ga ₂ O ₃外延层上制造的。实现了 31 µs（1/e 衰减）和 2.76 µs（快速分量）的超快响应时间，优于迄今为止所有的 Ga ₂ O ₃ UVC-PD。在0 V自供电下，由于载流子收集长度的增加，叉指电极结构增强了叉指PD的响应度（0.25 AW ^-1 ）。在偏压下，通过增强Ga ₂ O ₃区域的内置电场，显着提高了叉指PD的性能，其响应度为41.7 AW ^-1 ，选择比为8243，分别是传统PD的34.76倍和39.4倍。还通过具有不同电极间距和周长的叉指PD来研究叉指结构的内在增强机制。总之，本文不仅报道了一种高性能的叉指结构p-GaN/n-Ga ₂ O ₃ UVCPD，而且还为基于Ga ₂ O ₃的PN-PD的结构设计提供了指导。

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Enhancing Performance of GaN/Ga2O3 P-N Junction Uvc Photodetectors via Interdigitated Structure

Ga₂O₃-based Ultraviolet-C photodetector (UVCPD) is considered the most promising UVCPD at present and is divided into Metal-Semiconductor-Metal (MSM) and PN junction types. Compared with MSM-PDs, PN-PDs exhibit superior transient performance due to the built-in electric field. However, current Ga₂O₃-based PN-PDs lack consideration for carrier collection and electric field distribution. In this study, PN-PDs with an interdigital n-Ga₂O₃ layer and finger electrodes are fabricated on p-GaN/n-Ga₂O₃ epilayers. Ultrafast response times of 31 µs (1/e decay) and 2.76 µs (fast component) are realized, which outperforms all Ga₂O₃ UVC-PDs up to now. Under 0 V self-powered, the responsivity (0.25 A W⁻¹) of interdigital PD is enhanced by the interdigital electrode structure due to increasing carriers’ collection length. Under bias, the performances of interdigital PD with 41.7 A W⁻¹ responsivity and 8243 selection ratios are significantly elevated by enhancing the built-in electric field in the Ga₂O₃ region, which is 34.76 and 39.4 times those of traditional PDs, respectively. The intrinsic enhancing mechanism of interdigital structure is also investigated by interdigital PDs with various electrode spacings and perimeters. In summary, this paper not only reports a highly performed interdigitated structure p-GaN/n-Ga₂O₃ UVCPDs, but also provides guidelines for structure design in Ga₂O₃-based PN-PDs.

更新日期：2023-12-10

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