High-performance MoS2 Homojunction Photodiode Enabled by Facile Van der Waals Contacts with 2D Perovskite,Laser & Photonics Reviews

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High-performance MoS2 Homojunction Photodiode Enabled by Facile Van der Waals Contacts with 2D Perovskite
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2023-12-08 , DOI: 10.1002/lpor.202300941
Yueheng Lu ₁ , Zhenye Zhan ₁ , Jinbiao Tan ₁ , Haojie Lai ₂ , Pengyi Liu _{1,

3} , Yang Zhou _{1,

3} , Weiguang Xie _{1,

3}

Affiliation

p–n junction, as an important part of modern electronics and integrated circuits, is the basis of various functional devices. Compared with heterojunctions, 2D p–n homojunctions preclude interface problems and have greater potential in ultra-sensitive photodetection. Here, through simple van der Waals contacts with a 2D perovskite layer, it is realized efficient p-type doping of MoS₂ and constructed a high-performance photodiode based on MoS₂ homogeneous p–n junction. The dark current is as low as 10⁻¹² A, with an ideality factor of 1.3. Under illumination, the open circuit voltage of the device can reach up to 0.7 V. In addition, under zero bias, the device exhibits a high responsivity of 529 mA W⁻¹ and a fast response time of 105/109 µs. This work not only provides a facile and stable method to construct the MoS₂ p–n homojunction but also opens up possibilities for new-type 2D-based optoelectronic devices and technologies.

中文翻译：

Facile Van der Waals 与 2D 钙钛矿接触实现高性能 MoS2 同质结光电二极管

p-n结作为现代电子学和集成电路的重要组成部分，是各种功能器件的基础。与异质结相比，2D p-n 同质结消除了界面问题，在超灵敏光电检测方面具有更大的潜力。这里，通过与二维钙钛矿层的简单范德华接触，实现了MoS _{2的高效p型掺杂，并构建了基于MoS}₂均质p-n结的高性能光电二极管。暗电流低至10 ^-12 A，理想因子为1.3。在光照下，该器件的开路电压可达0.7 V。此外，在零偏压下，该器件表现出529 mA W ⁻¹的高响应度和105/109 µs的快速响应时间。这项工作不仅为构建MoS ₂ p-n同质结提供了一种简便、稳定的方法，而且为新型基于二维的光电器件和技术开辟了可能性。

更新日期：2023-12-08

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