As a typical phase transition material, vanadium dioxide (VO₂) exhibits a promising candidate in the thermochromic field, while the relatively high critical temperature, low luminous transmittance and poor near-infrared modulation impede its practical application. Herein, we propose a facile strategy to overcome the challenges above. The critical temperature of VO₂ films gradually reduced as the phosphating temperature increased and became a metallic state even below 2 kelvin. Combining with the first-principles calculations, the mechanism that P-doping induced the metal-insulator transition of VO₂ was ascribed to the increment of itinerant electrons, and the migration of the energy band that moved toward the Fermi level. Optical performances demonstrated that the near-infrared modulation ability reached 19.3 %, while there was a 12.1 % improvement in luminous transmittance after the appropriate phosphating process of VO₂ films. Meanwhile, the thermal emissivity value greatly decreased from 0.83 to 0.56. The current findings not only offer a novel strategy to boost the thermochromic characteristics of VO₂, but also bring insight into a comprehensive understanding of the mechanism of phase transition in VO₂.

作为一种典型的相变材料，二氧化钒（VO ₂ ）在热致变色领域表现出一种有前景的候选材料，但较高的临界温度、较低的透光率和较差的近红外调制能力阻碍了其实际应用。在此，我们提出了一种简单的策略来克服上述挑战。随着磷化温度的升高，VO ₂薄膜的临界温度逐渐降低，甚至在2开尔文以下也成为金属态。结合第一性原理计算，P掺杂引起VO _{2金属-绝缘体转变的机制}归因于巡回电子的增加以及能带向费米能级的迁移。_{光学性能表明，经过适当的磷化处理后，VO 2薄膜}的近红外调制能力达到了19.3%，而透光率提高了12.1%。同时，热发射率值从0.83大幅下降至0.56。目前的研究结果不仅提供了一种提高VO ₂热致变色特性的新策略，而且使人们能够深入了解VO ₂的相变机制。