Spectral selection is one of the key performance parameters for visible light photodetectors (VLPD). However, as the absorbing layer of the VLPD, the semiconductor has strong ultraviolet light absorption, leading to poor visible light selectivity of the VLPD. This work fabricated a flexible photovoltaic VLPD based on Cu₂O/Cu Schottky junction by annealing Cu foil. Under zero bias, the Cu₂O/Cu VLPD showed the responsivity of 14 mA/W, the response time of 1 ms, and the detectivity of 8.8 × 10¹¹ Jones to 620 nm light. Moreover, the detection band of the device is in the range of 500–640 nm, indicating excellent visible light selectivity. Optical and electrical characterization shows that the high visible selectivity of the device is mainly attributed to the fact that the penetration depth of visible light in Cu₂O film matches the position of the Cu₂O/Cu Schottky junction. This, in turn, induces the effective separation of the photogenerated carriers excited by the visible light. In addition, the bend detection performance of the device is demonstrated. This work provides a reference for improving the spectral selectivity of visible photodetectors.

光谱选择是可见光光电探测器（VLPD）的关键性能参数之一。然而，半导体作为VLPD的吸收层，具有较强的紫外光吸收能力，导致VLPD的可见光选择性较差。这项工作通过对铜箔进行退火制备₂的柔性光伏VLPD在零偏压下，Cu₂对620 nm光的响应度为14 mA/W，响应时间为1 ms，探测灵敏度为8.8 × 10¹¹此外，该器件的检测波段在500-640 nm范围内，表现出优异的可见光选择性。光学和电学表征表明，该器件具有较高的可见光选择性，主要归因于可见光在Cu₂₂O/Cu肖特基结的位置相匹配这反过来又导致可见光激发的光生载流子的有效分离。此外，还演示了该设备的弯曲检测性能。该工作为提高可见光电探测器的光谱选择性提供了参考。