<br>蓝宝石衬底调制的大面积单晶TMD生长,Nanoscale

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蓝宝石衬底调制的大面积单晶TMD生长
Nanoscale ( IF 5.8 ) Pub Date : 2023-12-06 , DOI: 10.1039/d3nr05400d
Lina Chen ₁ , Zhaofang Cheng _{1,

2} , Shaodan He ₁ , Xudong Zhang ₁ , Kelun Deng ₁ , Dehua Zong ₁ , Zipeng Wu ₁ , Minggang Xia _{1,

2,

3}

Affiliation

过渡金属二硫属化物（TMDs）由于其独特的物理和化学性质近年来引起了广泛的关注。然而，大面积TMD单晶的制备仍然是一个巨大的挑战。化学气相沉积（CVD）是合成大面积、高质量TMD薄膜的有效方法，其中蓝宝石作为合适的衬底在锚定源材料、促进成核和调节外延生长方面发挥着至关重要的作用。在这篇综述中，我们对与蓝宝石表面原子结构和生长参数相关的不同外延机制和生长行为进行了深入的概述。首先，我们总结了蓝宝石衬底上TMD的三种外延生长机制，即范德华外延、步进引导外延和双耦合引导外延。其次，我们介绍了蓝宝石表面的抛光、切割和退火处理对TMD生长的影响。最后，我们讨论了其他生长参数，如温度、压力、载气和衬底位置对 TMD 生长动力学的影响。这篇综述可能会为蓝宝石上大面积单晶TMD的可控生长提供深入的见解，这将推动它们在高性能纳米电子学和光电子学中的实际应用。

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Large-area single-crystal TMD growth modulated by sapphire substrates

Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.

更新日期：2023-12-06

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