使用基于忆阻 HfO2 的铁电隧道结探索内存中的多位逻辑,Advanced Electronic Materials

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使用基于忆阻 HfO2 的铁电隧道结探索内存中的多位逻辑
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2023-12-05 , DOI: 10.1002/aelm.202300618
Wonwoo Kho ₁ , Hyunjoo Hwang ₁ , Seung‐Eon Ahn _{1,

2}

Affiliation

在物理上独立的冯·诺依曼架构（其中处理器和内存是不同的实体）中，对数据移动和能耗的需求不断增长，凸显了内存墙问题的严重性。因此，基于忆阻器的内存逻辑（LiM）引起了人们的极大兴趣，因为它是一种能够在单个设备中执行逻辑和内存功能的范例。铁电隧道结（FTJ）具有能耗低、可扩展性高等优点；因此，它们特别适合用作 LiM 中的模拟忆阻器。FTJ 中模拟电阻状态的精确编程对于实现高效的基于忆阻器的 LiM 设计至关重要。然而，现有的 FTJ 切换模型无法完全考虑铁电域切换，这对多位 LiM 操作提出了挑战。这尤其适用于涉及从一种中间电阻状态 (IRS) 更新到另一种 IRS 的情况，例如在 2 位 LiM 中从状态 01 转换到 10。在这项研究中，在 HZO FTJ 器件的 IRS 中观察到了与域切换相关的新现象，并将其应用于 LiM 实现。这些发现不仅可以提高基于 FTJ 的 LiM 的操作准确性和更新规则，还可以提高其他 FTJ 应用（例如交叉开关阵列）的操作准确性和更新规则。

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Exploring Multi-Bit Logic In-Memory with Memristive HfO2-Based Ferroelectric Tunnel Junctions

The increasing demand for data movement and energy consumption in physically separate von Neumann architectures, where the processor and memory are distinct entities, highlights the severity of the memory-wall problem. Thus, memristor-based logic-in-memory (LiM) has garnered significant interest as it is a paradigm that enables both logic and memory functionalities to be performed within a single device. Ferroelectric tunnel junctions (FTJs) have the advantages of low energy consumption and high scalability; thus, they are particularly appropriate for use as analog memristors in LiMs. Precise and accurate programming of the analog resistance states in FTJs is essential to achieve an efficient memristor-based LiM design. However, existing switching models for FTJs cannot completely consider the ferroelectric domain switching, which challenges multi-bit LiM operations. This particularly applies in cases involving updates from one intermediate resistance state (IRS) to another IRS, such as transitioning from State 01 to 10 in 2-bit LiM. In this study, a novel phenomenon associated with domain switching is observed in the IRS of an HZO FTJ device and applied it to an LiM implementation. These findings can contribute to the operational accuracy and update rules of not only FTJ-based LiMs but also other FTJ applications, such as crossbar arrays.

更新日期：2023-12-05

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