<br>等离子体处理实现层状 MoS2 中的氧替代和室温中红外 (10 μm) 光响应,ACS Applied Materials & Interfaces

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等离子体处理实现层状 MoS2 中的氧替代和室温中红外 (10 μm) 光响应
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-12-06 , DOI: 10.1021/acsami.3c11962
Jiahao Wu ₁ , Shasha Li ₂ , Ximiao Wang ₁ , Yuan Huang ₃ , Yifeng Huang ₁ , Huanjun Chen ₁ , Jun Chen ₁ , Juncong She ₁ , Shaozhi Deng ₁

Affiliation

越来越多的应用非常需要中红外（MIR，3-15 μm）高灵敏度光电探测器。然而，只有少数窄带隙半导体适合此用途，其中大多数需要低温冷却以提高信噪比。实现在室温下运行的高性能中红外光电探测器仍然是一个挑战。在此，我们报告了用于室温 MIR (10 μm) 光电检测的等离子体处理的几层 MoS ₂ 。采用氧等离子体处理，这是一种成熟的微加工工艺。氧等离子体的离子动能调整为70-130 eV。在中红外光（10 μm）照射下，平均功率密度为114.6 mW/cm ² ，获得0.042 mA/W的光响应度和1.57 × 10 ⁷ Jones的探测灵敏度。光响应归因于通过氧取代在MoS ₂的带隙中引入电子态。石墨烯/等离子体处理的MoS ₂ /石墨烯器件被进一步证明可以缩短活性通道，同时保持照明面积。光响应度和探测度分别大幅提升至 1.8 A/W 和 2.64 × 10 ⁹ Jones。石墨烯/等离子体处理的MoS ₂ /石墨烯器件的优异探测性能在单探测器MIR（10μm）扫描成像中得到进一步证明。这项工作提供了一种构建基于 MoS ₂的集成 MIR 光电探测器的简便方法。

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Plasma Treatment for Achieving Oxygen Substitution in Layered MoS2 and the Room-Temperature Mid-Infrared (10 μm) Photoresponse

Highly sensitive photodetectors in the mid-infrared (MIR, 3–15 μm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS₂ for room-temperature MIR (10 μm) photodetection. Oxygen plasma treatment, which is a mature microfabrication process, is employed. The ion kinetic energy of oxygen plasma is adjusted to 70–130 eV. A photoresponsivity of 0.042 mA/W and a detectivity of 1.57 × 10⁷ Jones are obtained under MIR light (10 μm) illumination with an average power density of 114.6 mW/cm². The photoresponse is attributed to the introduction of electronic states in the band gap of MoS₂ through oxygen substitution. A graphene/plasma-treated MoS₂/graphene device is further demonstrated to shorten the active channel while maintaining the illumination area. The photoresponsivity and detectivity are largely boosted to 1.8 A/W and 2.64 × 10⁹ Jones, respectively. The excellent detective performance of the graphene/plasma-treated MoS₂/graphene device is further demonstrated in single-detector MIR (10 μm) scanning imaging. This work offers a facile approach to constructing integrated MoS₂-based MIR photodetectors.

更新日期：2023-12-06

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