With the advancement of GaO-based deep-ultraviolet (DUV) photodetectors (PDs), the integration of PDs into array image sensors has become a sought-after objective. However, while solar-blind imaging research primarily revolves around solid-state GaO-based PDs, there remains a significant gap in the exploration of novel photoelectrochemical (PEC) PDs for solar-blind imaging applications. In this study, self-powered solar-blind PEC-PDs with enhanced performance are fabricated based on α-GaO@a-AlO core–shell nanorod arrays (NRAs). Under DUV irradiation and without external bias, the α-GaO@a-AlO devices demonstrate remarkable superiority over α-GaO devices. When the light intensity was at 0.50 mW cm, the photocurrent density notably rises from 4.60 to 11.24 μA cm, accompanied by a corresponding increase in responsivity from 9.60 to 22.70 mA W. The enhanced performance is attributed to the α-GaO@a-AlO heterostructure, which establishes a built-in electric field facilitating the separation and directed transport of photogenerated carriers at the interface. Moreover, for the first time, a 5 × 5 matrix of α-GaO@a-AlO core–shell NRAs-based PEC-type PDs is employed to demonstrate a proof-of-concept for self-powered solar-blind imaging, capable of effectively capturing the shapes of the letters “C” and “N”. This work underscores the immense potential of GaO-based PEC-type PDs for future large-area solar-blind imaging applications.

中文翻译：

---

通过构建用于日盲成像的α-Ga2O3@a-Al2O3核壳纳米棒阵列增强自供电深紫外光电化学光电探测器的性能

随着基于 GaO 的深紫外 (DUV) 光电探测器 (PD) 的进步，将 PD 集成到阵列图像传感器中已成为炙手可热的目标。然而，虽然日盲成像研究主要围绕固态GaO基PD，但在探索用于日盲成像应用的新型光电化学（PEC）PD方面仍然存在很大差距。在这项研究中，基于α-GaO@a-Al2O核壳纳米棒阵列（NRA）制造了具有增强性能的自供电日盲PEC-PD。在 DUV 照射下且没有外部偏置的情况下，α-GaO@a-Al2O3 器件表现出比 α-Ga2O3 器件显着的优越性。当光强度为0.50 mW cm时，光电流密度从4.60 μA cm显着上升至11.24 μA cm，响应度从9.60 mA W相应增加至22.70 mA W。性能的增强归因于α-GaO@a-Al2O3异质结构，它建立了一个内置电场，促进界面处光生载流子的分离和定向传输。此外，首次采用基于 α-GaO@a-Al2O 核壳 NRA 的 5 × 5 矩阵 PEC 型 PD 来演示自供电日盲成像的概念验证，能够有效捕捉字母“C”和“N”的形状。这项工作强调了基于 GaO 的 PEC 型 PD 在未来大面积日盲成像应用中的巨大潜力。