Near-Infrared Nanophosphors Based on CuInSe2 Quantum Dots with Near-Unity Photoluminescence Quantum Yield for Micro-LEDs Applications,Advanced Materials

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Near-Infrared Nanophosphors Based on CuInSe2 Quantum Dots with Near-Unity Photoluminescence Quantum Yield for Micro-LEDs Applications
Advanced Materials ( IF 27.4 ) Pub Date : 2023-12-02 , DOI: 10.1002/adma.202311011
Wei Lian _{1,

2} , Datao Tu _{1,

2,

3} , Xukeng Weng ₄ , Kaiyu Yang ₄ , Fushan Li ₄ , Decai Huang ₁ , Haomiao Zhu _{1,

2} , Zhi Xie ₅ , Xueyuan Chen _{1,

2,

3}

Affiliation

Highly efficient near-infrared (NIR) luminescent nanomaterials are urgently required for portable mini or micro phosphors-converted light-emitting diodes (pc-LEDs). However, most existing NIR-emitting phosphors are generally restricted by their low photoluminescence (PL) quantum yield (QY) or large particle size. Herein, a kind of highly efficient NIR nanophosphors is developed based on copper indium selenide quantum dots (CISe QDs). The PL peak of these QDs can be exquisitely manipulated from 750 to 1150 nm by altering the stoichiometry of Cu/In and doping with Zn²⁺. Their absolute PLQY can be significantly improved from 28.6% to 92.8% via coating a ZnSe shell. By combining the phosphors with a commercial blue chip, an NIR pc-LED is fabricated with remarkable photostability and a record-high radiant flux of 88.7 mW@350 mA among the Pb/Cd-free QDs-based NIR pc-LEDs. Particularly, such QDs-based nanophosphors acted as excellent luminescence converter for NIR micro-LEDs with microarray diameters below 5 µm, which significantly exceeds the resolutions of current commercial inkjet display pixels. The findings may open new avenues for the exploration of highly efficient NIR micro-LEDs in a variety of applications.

中文翻译：

基于 CuInSe2 量子点的近红外纳米荧光粉，具有接近一致的光致发光量子产率，适用于 Micro-LED 应用

便携式微型或微型荧光粉转换发光二极管（pc-LED）迫切需要高效的近红外（NIR）发光纳米材料。然而，大多数现有的近红外发射荧光粉通常受到其低光致发光（PL）量子产率（QY）或大粒径的限制。在此，开发了一种基于铜铟硒量子点（CISe QD）的高效近红外纳米荧光粉。通过改变 Cu/In 的化学计量和掺杂 Zn ²⁺ ，可以在 750 至 1150 nm 范围内精确控制这些 QD 的 PL 峰。通过涂覆 ZnSe 壳，它们的绝对 PLQY 可以从 28.6% 显着提高到 92.8%。通过将荧光粉与商用蓝色芯片相结合，制成的近红外 pc-LED 具有出色的光稳定性，并且在基于无铅/镉 QD 的近红外 pc-LED 中具有创纪录的 88.7 mW@350 mA 辐射通量。特别是，这种基于量子点的纳米磷光体可以作为微阵列直径低于 5 µm 的近红外微型 LED 的出色发光转换器，大大超过了当前商用喷墨显示像素的分辨率。这些发现可能为在各种应用中探索高效 NIR micro-LED 开辟新途径。

更新日期：2023-12-02

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