The diamond-graphene heterostructure is a promising all‑carbon composite structure, which can take advantages of excellent properties of these two materials. At present, the diamond-graphene heterojunction is mostly fabricated by CVD method with intrinsic diamond substrate. In this study, the graphene is synthesized on boron-doped-diamond (BDD) surface through a simple thermal treatment method with Ni catalyst. Furthermore, the effects of boron doping concentration of substrate on the synthesis of diamond-graphene heterojunctions is studied. It demonstrates that the surface morphology and roughness is improved with the increasing of substrate doping concentration. Compared with the light doped one and un-doped one, the layers are less and quality are better for the heavy doped one. XPS and contact angle tests further confirmed the conclusions of this paper.

金刚石-石墨烯异质结构是一种很有前途的全碳复合结构，它可以利用这两种材料的优异性能。目前，金刚石-石墨烯异质结大多采用本征金刚石衬底通过CVD法制备。在这项研究中，通过简单的热处理方法用镍催化剂在硼掺杂金刚石（BDD）表面合成了石墨烯。此外，还研究了基底的硼掺杂浓度对金刚石-石墨烯异质结合成的影响。结果表明，随着衬底掺杂浓度的增加，表面形貌和粗糙度得到改善。与轻掺杂和未掺杂相比，重掺杂的层数更少，质量更好。XPS和接触角测试进一步证实了本文的结论。