Hexagonal boron nitride (BN) was dispersed into the lattice of Sr₂Bi₄Ti₅O₁₈ (SBT) ferroelectrics to form all-inorganic flexible film capacitors. The interfacial lattice coupling in microscopic induces reconstruction of lattice and electron configuration. The electrons transfer interaction at the interfacial lattices results in the lattice stretching, thereby enhancing polyhedral dipole-dipole interactions. Meanwhile, the potential difference derived from the electron transfer provides driving force for the interfacial polarization. Above both effectively enhance the polarization without expense of breakdown strength. The interfacial lattice coupling greatly reduces the carrier generation rates under high electric field due to the ultra-high bandgap of BN, which further improves breakdown strength, thus, suppressing the inversed relationship. The recovery energy density of 119.7 J/cm³ and the efficiency of 71.2 % are obtained with a consecutive mechanical bending stability. This strategy provides an alternative to break through the inversed relationship between polarization and breakdown strength for all-inorganic flexible film capacitors.

将六方氮化硼(BN)分散到Sr ₂ Bi ₄ Ti ₅ O ₁₈ (SBT)铁电体晶格中形成全无机柔性薄膜电容器。微观上的界面晶格耦合引起晶格和电子构型的重构。界面晶格处的电子转移相互作用导致晶格拉伸，从而增强多面体偶极子-偶极子相互作用。同时，电子转移产生的电势差为界面极化提供了驱动力。以上两者都有效地增强了极化而不牺牲击穿强度。由于BN的超高带隙，界面晶格耦合大大降低了高电场下的载流子产生速率，进一步提高了击穿强度，从而抑制了倒数关系。恢复能量密度为119.7 J/cm ³，效率为71.2%，并且具有连续的机械弯曲稳定性。该策略为突破全无机柔性薄膜电容器的极化与击穿强度之间的反比关系提供了一种替代方案。