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High-Performance Photodetectors Based on Semiconducting Graphene Nanoribbons
Nano Letters ( IF 9.6 ) Pub Date : 2023-11-27 , DOI: 10.1021/acs.nanolett.3c03563 Mingyang Wang 1 , Xiaoxiao Zheng 1 , Xiaoling Ye 1 , Wencheng Liu 1 , Baoqing Zhang 1 , Zihao Zhang 1 , Rongli Zhai 1 , Yafei Ning 1, 2 , Hu Li 1, 2 , Aimin Song 1, 3
Nano Letters ( IF 9.6 ) Pub Date : 2023-11-27 , DOI: 10.1021/acs.nanolett.3c03563 Mingyang Wang 1 , Xiaoxiao Zheng 1 , Xiaoling Ye 1 , Wencheng Liu 1 , Baoqing Zhang 1 , Zihao Zhang 1 , Rongli Zhai 1 , Yafei Ning 1, 2 , Hu Li 1, 2 , Aimin Song 1, 3
Affiliation
The inherent zero-band gap nature of graphene and its fast photocarrier recombination rate result in poor optical gain and responsivity when graphene is used as the light absorption medium in photodetectors. Here, semiconducting graphene nanoribbons with a direct bandgap of 1.8 eV are synthesized and employed to construct a vertical heterojunction photodetector. At a bias voltage of −5 V, the photodetector exhibits a responsivity of 1052 A/W, outperforming previous graphene-based heterojunction photodetectors by several orders of magnitude. The achieved detectivity of 3.13 × 1013 Jones and response time of 310 μs are also among the best values for graphene-based heterojunction photodetectors reported until date. Furthermore, even under zero bias, the photodetector demonstrates a high responsivity and detectivity of 1.04 A/W and 2.45 × 1012 Jones, respectively. The work shows a great potential of graphene nanoribbon-based photodetection technology.
中文翻译:
基于半导体石墨烯纳米带的高性能光电探测器
当石墨烯用作光电探测器中的光吸收介质时,石墨烯固有的零带隙性质及其快速的光载流子复合率导致光学增益和响应度较差。在这里,合成了直接带隙为 1.8 eV 的半导体石墨烯纳米带,并用于构建垂直异质结光电探测器。在-5 V的偏置电压下,光电探测器表现出1052 A/W的响应度,比之前基于石墨烯的异质结光电探测器好几个数量级。所实现的 3.13 × 10 13 Jones 探测率和 310 μs 响应时间也是迄今为止报道的基于石墨烯的异质结光电探测器的最佳值之一。此外,即使在零偏压下,光电探测器也表现出分别为 1.04 A/W 和 2.45 × 10 12 Jones 的高响应度和探测率。这项工作展示了基于石墨烯纳米带的光电探测技术的巨大潜力。
更新日期:2023-11-27
中文翻译:
基于半导体石墨烯纳米带的高性能光电探测器
当石墨烯用作光电探测器中的光吸收介质时,石墨烯固有的零带隙性质及其快速的光载流子复合率导致光学增益和响应度较差。在这里,合成了直接带隙为 1.8 eV 的半导体石墨烯纳米带,并用于构建垂直异质结光电探测器。在-5 V的偏置电压下,光电探测器表现出1052 A/W的响应度,比之前基于石墨烯的异质结光电探测器好几个数量级。所实现的 3.13 × 10 13 Jones 探测率和 310 μs 响应时间也是迄今为止报道的基于石墨烯的异质结光电探测器的最佳值之一。此外,即使在零偏压下,光电探测器也表现出分别为 1.04 A/W 和 2.45 × 10 12 Jones 的高响应度和探测率。这项工作展示了基于石墨烯纳米带的光电探测技术的巨大潜力。