As a common impurity, H plays a role in tuning the electrical properties of β-Ga₂O₃ and has attracted immense interest. Despite years of investigations, the influence of H-doping on electrical properties is not always clear due to the lack of comprehensive characterization on both micro- and macro scale. In this work, we investigate the effects of the H-plasma treatment on the electrical properties of β-Ga₂O₃ films by combining several techniques, from macroscale Hall and photoluminescence measurements to microscale conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The incorporation of H in β-Ga₂O₃ not only introduces shallow donor states such as H_i, but also passivates V_Ga defects by forming the V_Ga-4H complex. As a result, both the carrier concentration and mobility of H-doped β-Ga₂O₃ film are significantly increased, corresponding to an enhancement of conductivity by four orders of magnitude in comparison with the intrinsic one. These results correlate well with the local conductivity and surface potential mappings obtained from CAFM and KPFM. Moreover, we found that the work function of β-Ga₂O₃ thin films can also be tuned by the H-plasma treatment.

_{作为一种常见的杂质，H在调节β-Ga 2} O ₃的电性能方面发挥着重要作用，引起了人们的极大兴趣。尽管经过多年的研究，由于缺乏微观和宏观尺度的全面表征，氢掺杂对电性能的影响并不总是清楚。在这项工作中，我们通过结合多种技术，从宏观霍尔和光致发光测量到微观尺度传导原子力显微镜 (CAFM) 和开尔文探针力，研究 H 等离子体处理对 β-Ga ₂ O ₃薄膜电性能的影响显微镜（KPFM）。_{H在β-Ga 2} O ₃中的掺入不仅引入了浅施主态例如H _i，而且通过形成V _{Ga -4H络合物钝化了V Ga}缺陷。结果，H掺杂β-Ga ₂ O ₃薄膜的载流子浓度和迁移率均显着增加，电导率比本征薄膜提高了四个数量级。这些结果与从 CAFM 和 KPFM 获得的局部电导率和表面电势映射很好地相关。_{此外，我们发现β-Ga 2} O ₃薄膜的功函数也可以通过H等离子体处理来调节。