<br>铁电 HfO2 缺陷工程的最新进展：通过多尺度结构优化迈出下一步,Materials Horizons

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铁电 HfO2 缺陷工程的最新进展：通过多尺度结构优化迈出下一步
Materials Horizons ( IF 12.2 ) Pub Date : 2023-11-29 , DOI: 10.1039/d3mh01273e
Fengjun Yan ₁ , Yao Wu ₁ , Yilong Liu ₁ , Pu Ai ₁ , Shi Liu ₂ , Shiqing Deng ₃ , Kan-Hao Xue ₁ , Qiuyun Fu _{1,

4} , Wen Dong _{1,

4}

Affiliation

近年来，HfO ₂基萤石薄膜中非常规无标度铁电性的发现因其在低功耗逻辑和非易失性存储器中的潜在应用而引起了广泛关注。 HfO ₂的铁电性本质上源于广泛接受的铁电亚稳态正交晶系Pca 2 ₁相。在过去的十年中，缺陷掺杂/固溶体在通过等价或异价缺陷工程增强和稳定铁电性方面显示出了良好的前景。本文首先综述了缺陷工程HfO ₂基铁电体的最新进展，包括单离子掺杂和混合离子掺杂的进展。然后，总结了缺陷-晶格相关性、点缺陷促进相变动力学以及氧空位的界面工程动态行为。此外，还对薄膜制备和离子轰击掺杂进行了总结。最后，讨论了前景和挑战。建议采用多尺度结构优化方法来进一步优化性能。本文不仅概述了萤石铁电体缺陷的最新进展，还展望了可能通过缺陷工程进一步优化其性能的未来前景。

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Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

The discovery of unconventional scale-free ferroelectricity in HfO₂-based fluorite thin films has attracted great attention in recent years for their promising applications in low-power logic and nonvolatile memories. The ferroelectricity of HfO₂ is intrinsically originated from the widely accepted ferroelectric metastable orthorhombic Pca2₁ phase. In the last decade, defect-doping/solid solution has shown excellent prospects in enhancing and stabilizing the ferroelectricity via isovalent or aliovalent defect-engineering. Here, the recent advances in defect-engineered HfO₂-based ferroelectrics are first reviewed, including progress in mono-ionic doping and mixed ion-doping. Then, the defect-lattice correlation, the point-defect promoted phase transition kinetics, and the interface-engineered dynamic behaviour of oxygen vacancy are summarized. In addition, thin film preparation and ion bombardment doping are summarized. Finally, the outlook and challenges are discussed. A multiscale structural optimization approach is suggested for further property optimization. This article not only covers an overview of the state-of-art advances of defects in fluorite ferroelectrics, but also future prospects that may inspire their further property-optimization via defect-engineering.

更新日期：2023-11-29

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