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Side-Gate BN-MoS2 Transistor for Reconfigurable Multifunctional Electronics
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2023-11-27 , DOI: 10.1002/aelm.202300621 Daobing Zeng 1, 2 , Rongxiang Ding 1, 2 , Guanyu Liu 1 , Huihui Lu 1, 2 , Miao Zhang 1 , Zhongying Xue 1 , Ziao Tian 1 , Zengfeng Di 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2023-11-27 , DOI: 10.1002/aelm.202300621 Daobing Zeng 1, 2 , Rongxiang Ding 1, 2 , Guanyu Liu 1 , Huihui Lu 1, 2 , Miao Zhang 1 , Zhongying Xue 1 , Ziao Tian 1 , Zengfeng Di 1
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Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air-unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side-gate reconfigurable device is illustrated based on simple BN-MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double-side-gate reconfigurable logic transistor, and top floating gate memory. A lateral n+-n homojunction is created along the MoS2 channel and the rectification ratio is above 105. Reconfigurable logic operations (OR, AND) can be achieved in a single double-side-gate device and the current on/off ratio is ≈t 104. Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems.
中文翻译：
用于可重构多功能电子器件的侧栅 BN-MoS2 晶体管
开发二维可重构多功能器件在进一步缩小芯片面积和简化电路设计方面具有巨大潜力。二维范德华（vdW）异质结构提供了一种实现可重构多功能器件的新方法。尽管之前有大量报告将各种功能集成在单个二维异质结构器件中，但大多数器件都是基于复杂的多层异质结构或空气不稳定通道材料，限制了它们在集成电路中的应用能力。迫切需要开发结构简单、电性能稳定的二维可重构多功能器件。在这项工作中，基于简单的 BN-MoS 2 vdW 异质结构展示了一种侧栅可重构器件。在单个器件中实现了三种不同的功能，包括二极管、双边栅极可重构逻辑晶体管和顶部浮栅存储器。沿MoS 2通道形成横向n + -n 同质结，并且整流比高于10 5。可在单个双侧栅极器件中实现可重构逻辑运算（OR、AND），电流开/关比≈t 10 4。此外，该器件在背栅操作下可以充当浮栅存储器。这些结果为集成相同的可重构多功能设备以实现复杂的电子系统铺平了道路。
更新日期：2023-11-27
中文翻译：
用于可重构多功能电子器件的侧栅 BN-MoS2 晶体管
开发二维可重构多功能器件在进一步缩小芯片面积和简化电路设计方面具有巨大潜力。二维范德华（vdW）异质结构提供了一种实现可重构多功能器件的新方法。尽管之前有大量报告将各种功能集成在单个二维异质结构器件中，但大多数器件都是基于复杂的多层异质结构或空气不稳定通道材料，限制了它们在集成电路中的应用能力。迫切需要开发结构简单、电性能稳定的二维可重构多功能器件。在这项工作中，基于简单的 BN-MoS 2 vdW 异质结构展示了一种侧栅可重构器件。在单个器件中实现了三种不同的功能，包括二极管、双边栅极可重构逻辑晶体管和顶部浮栅存储器。沿MoS 2通道形成横向n + -n 同质结，并且整流比高于10 5。可在单个双侧栅极器件中实现可重构逻辑运算（OR、AND），电流开/关比≈t 10 4。此外，该器件在背栅操作下可以充当浮栅存储器。这些结果为集成相同的可重构多功能设备以实现复杂的电子系统铺平了道路。
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