As a part of this work, organic − inorganic metal halide perovskite (\({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\)) films were grown at different annealing temperatures (60, 100, and 140 °C). The findings revealed that the morphological, optical, and structural properties were enhanced by annealing at 60 °C and 100 °C, while increasing the temperature to 140 °C led to the partial decomposition of perovskite into lead iodide (\({\mathrm{PbI}}_{2}\)). In addition, the self-powered photodetection properties of pristine \({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) film, and \({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) grown on ZnO QD-based film and ZnO/Al₂O₃ films were evaluated under illumination with blue (470 nm), green (530 nm), red (660 nm), and white light. The ZnO/\({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) photodetector (PD) exhibited inferior photoresponse relative to the PD based on pristine \({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) owing to the \({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) degradation driven by the basic nature of ZnO QDs. On the other hand, insertion of Al₂O₃ as a passivation layer between ZnO QD-based film and MAPbI₃ suppressed perovskite degradation and enhanced the PD photodetection properties. Upon illumination with blue (470 nm) light, the responsivity, detectivity, and ON/OFF current ratio values of the ZnO/Al₂O₃/\({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) PD were calculated to be 71.05 mA/W, 5.61 × 10¹² Jones, and 9.3 × 10², respectively. The enhanced photodetection performance was attributed to the effectiveness of the Al₂O₃ passivation layer in reducing the number of trap centers and hydroxyl groups at the ZnO film surface, as evident from XPS results.

作为这项工作的一部分，有机-无机金属卤化物钙钛矿 ( \({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\ ) ) 薄膜在不同的退火温度（60、100 和 140 °C）下生长。研究结果表明，在 60 °C 和 100 °C 下退火可以增强形态、光学和结构特性，而将温度提高到 140 °C 会导致钙钛矿部分分解成碘化铅（\({\mathrm { PbI}}_{2}\) )。此外，原始\({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) 薄膜的自供电光电探测特性，和\({\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\) 在ZnO QD 基薄膜和 ZnO/Al ₂上生长O ₃膜在蓝色(470 nm)、绿色(530 nm)、红色(660 nm)和白光照射下进行评价。与_ _ PD 基于原始\({\mathrm{ CH }}_{3}{\mathrm{NH}}_{3}{\ mathrm {PbI}}_{3}\) CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\)由 ZnO 量子点的基本性质驱动的降解。另一方面，在ZnO QD基薄膜和MAPbI _{3之间插入Al 2} O ₃作为钝化层抑制了钙钛矿降解并增强了PD光电检测性能。_{在蓝色 (470 nm) 光照射下，ZnO/Al 2} O ₃ / \({\mathrm{CH}}_{3}{\mathrm{NH}的响应率、探测率和开/关电流比值}_{3}{\mathrm{PbI}}_{3}\) PD 经计算分别为 71.05 mA/W、5.61 × 10 ¹² Jones 和 9.3 × 10 ²。XPS 结果表明，光电检测性能的增强归因于 Al ₂ O ₃钝化层在减少 ZnO 薄膜表面陷阱中心和羟基数量方面的有效性。