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Microregion Characterization of Grain Boundary Defects and Electron Capture of CsPbI2Br Perovskite
Energy Technology ( IF 3.6 ) Pub Date : 2023-11-20 , DOI: 10.1002/ente.202300907 Linkai Yu 1 , Le Zhang 1 , Chuwu Xing 1 , Jing Yang 1 , Shuai Huang 1 , Qinghui Bao 1 , Duofa Wang 1 , Tianjin Zhang 1
Energy Technology ( IF 3.6 ) Pub Date : 2023-11-20 , DOI: 10.1002/ente.202300907 Linkai Yu 1 , Le Zhang 1 , Chuwu Xing 1 , Jing Yang 1 , Shuai Huang 1 , Qinghui Bao 1 , Duofa Wang 1 , Tianjin Zhang 1
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All-inorganic CsPbI2Br perovskite solar cell shows superior thermal stability, but the power conversion efficiency falls behind organic devices, due to the existence of abundant defects. Halogen and metal ions at the grain boundaries induce the formation of defect states, which increases the probability of carrier recombination. Grain boundaries are also the channels of ion migration. Herein, as relatively simple interface engineering strategy is used at the molecular level, using a multifunctional 2,5-thiophene dicarboxylic acid to passivate the interface between the perovskite surface and the carbon electrode. The 2,5-thiophene dicarboxylic acid can effectively coordinate the undercoordinated Pb2+, reduce the defect concentration of perovskite, and suppress the nonradiative recombination. The device with carbon electrode exhibits a power conversion efficiency of 13.4%. The microscopic passivation mechanism is investigated by Kelvin probe force microscopy. It is observed that the surface treatment effectively passivates the defects at the grain boundary and reduces the capture rate of photogenerated carriers of the grain boundary.
中文翻译：
CsPbI2Br 钙钛矿晶界缺陷的微区表征和电子捕获
全无机CsPbI 2 Br钙钛矿太阳能电池表现出优异的热稳定性，但由于存在大量缺陷，其功率转换效率落后于有机器件。晶界处的卤素和金属离子会诱导缺陷态的形成，从而增加载流子复合的可能性。晶界也是离子迁移的通道。这里，由于在分子水平上使用了相对简单的界面工程策略，使用多功能2,5-噻吩二羧酸来钝化钙钛矿表面和碳电极之间的界面。 2,5-噻吩二甲酸可以有效配位欠配位的Pb 2+，降低钙钛矿的缺陷浓度，抑制非辐射复合。采用碳电极的装置的功率转换效率为13.4%。通过开尔文探针力显微镜研究了微观钝化机制。结果表明，表面处理有效钝化了晶界缺陷，降低了晶界光生载流子的捕获率。
更新日期：2023-11-20
中文翻译：
CsPbI2Br 钙钛矿晶界缺陷的微区表征和电子捕获
全无机CsPbI 2 Br钙钛矿太阳能电池表现出优异的热稳定性，但由于存在大量缺陷，其功率转换效率落后于有机器件。晶界处的卤素和金属离子会诱导缺陷态的形成，从而增加载流子复合的可能性。晶界也是离子迁移的通道。这里，由于在分子水平上使用了相对简单的界面工程策略，使用多功能2,5-噻吩二羧酸来钝化钙钛矿表面和碳电极之间的界面。 2,5-噻吩二甲酸可以有效配位欠配位的Pb 2+，降低钙钛矿的缺陷浓度，抑制非辐射复合。采用碳电极的装置的功率转换效率为13.4%。通过开尔文探针力显微镜研究了微观钝化机制。结果表明，表面处理有效钝化了晶界缺陷，降低了晶界光生载流子的捕获率。
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