Manganese telluride (MnTe) is a potential - type semiconducting thermoelectric material in the mid temperature range. Herein, magnesium (Mg) is incorporated with Manganese telluride (MnTe) in the stoichiometric ratio of MnMgTe (x = 0, 0.025, 0.05, 0.075, 0.1) via vacuum sealing and hot press densification methods. The interstitial Mn atoms and Mg atoms create point defects and mass fluctuation, simultaneously. Stacking faults, twin boundaries and lattice dislocations are distinguished from HRTEM (High resolution transmission electron microscope). These defects are acting as a phonon scattering centers results in reduced total thermal conductivity of 0.827 W/mK at 653 K for MnMgTe. The excess Mn atoms in MnTe matrix and the substituted Mg atoms firmly contribute to improve the electrical conductivity by producing more acceptor levels, which significantly enhance the power factor of 439 µW/mK at 753 K for MnMgTe. Consequently, the maximum zT of 0.33 is achieved at 803 K for MnMgTe due to the synergistic effects of increased electrical property and reduced thermal conductivity.

中文翻译：

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中温应用碱性镁掺杂无铅碲化锰的热电性能

碲化锰（MnTe）是一种中温区电位型半导体热电材料。在此，通过真空密封和热压致密化方法，以MnMgTe（x=0、0.025、0.05、0.075、0.1）的化学计量比将镁（Mg）与碲化锰（MnTe）结合。间隙Mn原子和Mg原子同时产生点缺陷和质量波动。堆垛层错、孪晶界和晶格位错与 HRTEM（高分辨率透射电子显微镜）不同。这些缺陷充当声子散射中心，导致 MnMgTe 在 653 K 时的总热导率降低至 0.827 W/mK。 MnTe 基体中过量的 Mn 原子和取代的 Mg 原子通过产生更多的受主能级，有力地提高了电导率，从而显着提高了 MnMgTe 在 753 K 时的功率因数 439 µW/mK。因此，由于电性能增加和热导率降低的协同效应，MnMgTe 在 803 K 时达到了 0.33 的最大 zT。