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Amphoteric Ion Bridged Buried Interface for Efficient and Stable Inverted Perovskite Solar Cells
Advanced Materials ( IF 27.4 ) Pub Date : 2023-11-15 , DOI: 10.1002/adma.202310203
Yuling Zhang 1 , Runnan Yu 1 , Minghua Li 1 , Zhangwei He 1 , Yiman Dong 1 , Zhiyang Xu 1 , Ruyue Wang 1 , Zongwen Ma 1 , Zhanao Tan 1
Affiliation  

Synergistic morphology and defects management at the buried perovskite interface are challenging but crucial for the further improvement of inverted perovskite solar cells (PerSCs). Herein, an amphoteric organic salt, 2-(4-fluorophenyl)ethylammonium-4-methyl benzenesulfonate (4FPEAPSA), is designed to optimize the film morphology and energy level alignment at the perovskite buried interface. 4FPEAPSA treatment promotes the growth of a void-free, coarse-grained, and hydrophobic film by inducing the crystal orientation. Besides, the dual-functional 4FPEAPSA can chemically interact with the perovskite film, and passivate the defects of iodine and formamidine vacancies, tending to revert the fermi level of perovskite to its defect-free state. Meanwhile, the formation of a p-type doping buried interface can facilitate the interfacial charge extraction and transport of PerSCs for reduced carrier recombination loss. Consequently, 4FPEAPSA treatment improves the efficiency of the perovskite devices to 25.03% with better storage, heat, and humidity stability. This work contributes to strengthening the systematic understanding of the perovskite buried interface, providing a synergetic approach to realize precise morphology control, effective defect suppression, and energy level alignment for efficient PerSCs.

中文翻译:

用于高效稳定倒置钙钛矿太阳能电池的两性离子桥埋界面

掩埋钙钛矿界面的协同形态和缺陷管理具有挑战性,但对于进一步改进倒置钙钛矿太阳能电池(PerSC)至关重要。在此,设计了一种两性有机盐,2-(4-氟苯基)乙基铵-4-甲基苯磺酸盐(4FPEAPSA),以优化钙钛矿埋入界面处的薄膜形态和能级排列。4FPEAPSA 处理通过诱导晶体取向促进无空隙、粗粒和疏水薄膜的生长。此外,双功能4FPEAPSA可以与钙钛矿薄膜发生化学相互作用,钝化碘和甲脒空位的缺陷,从而使钙钛矿的费米能级恢复到无缺陷状态。同时,p型掺杂埋入界面的形成可以促进PerSCs的界面电荷提取和传输,从而减少载流子复合损失。因此,4FPEAPSA 处理将钙钛矿器件的效率提高至 25.03%,并具有更好的存储、热和湿度稳定性。这项工作有助于加强对钙钛矿埋入界面的系统理解,提供一种协同方法来实现高效 PerSC 的精确形貌控制、有效缺陷抑制和能级对准。
更新日期:2023-11-15
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