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Engineering Magnetic Phases of Layered Antiferromagnets by Interfacial Charge Transfer
ACS Nano ( IF 15.8 ) Pub Date : 2023-11-14 , DOI: 10.1021/acsnano.3c07125 Kaichen Xie 1 , Xiao-Wei Zhang 1 , Di Xiao 1, 2 , Ting Cao 1
ACS Nano ( IF 15.8 ) Pub Date : 2023-11-14 , DOI: 10.1021/acsnano.3c07125 Kaichen Xie 1 , Xiao-Wei Zhang 1 , Di Xiao 1, 2 , Ting Cao 1
Affiliation
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Van der Waals heterostructures composed of distinct layered materials can display behaviors entirely different from those of each individual layer due to interfacial coupling. Here we investigate the manipulation of magnetic phases in two-dimensional magnets through interfacial charge transfer in heterostructures of magnetic and nonmagnetic layers. This is demonstrated by first-principles calculations, which unveil a transition toward the ferromagnetic phase by stacking antiferromagnetic bilayer CrSBr on graphene. Using an effective model consisting of two electronically coupled single layers, we show that the antiferromagnetic to ferromagnetic magnetic phase transition occurs due to interfacial charge transfer, which enhances ferromagnetism. We further reveal that the magnetic phase transition can also be induced by electron and hole carriers and demonstrate that the phase transition is a spin-canting process. This allows for precise gate-control of noncollinear magnetism on demand. Our work predicts interfacial charge transfer as a potent mechanism to tune magnetic phases in van der Waals heterostructures and creates opportunities for spintronic applications.
中文翻译：
通过界面电荷转移设计层状反铁磁体的磁相
由于界面耦合，由不同层状材料组成的范德华异质结构可以表现出与每个单独层完全不同的行为。在这里，我们研究通过磁性和非磁性层异质结构中的界面电荷转移来操纵二维磁体中的磁性相。第一性原理计算证明了这一点，通过在石墨烯上堆叠反铁磁双层 CrSBr 揭示了向铁磁相的转变。使用由两个电子耦合单层组成的有效模型，我们表明由于界面电荷转移而发生反铁磁到铁磁的磁相变，这增强了铁磁性。我们进一步揭示了磁相变也可以由电子和空穴载流子引起，并证明相变是一个自旋倾斜过程。这允许根据需要对非共线磁性进行精确的门控制。我们的工作预测界面电荷转移是调节范德华异质结构中磁相的有效机制，并为自旋电子应用创造了机会。
更新日期：2023-11-14
中文翻译：
通过界面电荷转移设计层状反铁磁体的磁相
由于界面耦合，由不同层状材料组成的范德华异质结构可以表现出与每个单独层完全不同的行为。在这里，我们研究通过磁性和非磁性层异质结构中的界面电荷转移来操纵二维磁体中的磁性相。第一性原理计算证明了这一点，通过在石墨烯上堆叠反铁磁双层 CrSBr 揭示了向铁磁相的转变。使用由两个电子耦合单层组成的有效模型，我们表明由于界面电荷转移而发生反铁磁到铁磁的磁相变，这增强了铁磁性。我们进一步揭示了磁相变也可以由电子和空穴载流子引起，并证明相变是一个自旋倾斜过程。这允许根据需要对非共线磁性进行精确的门控制。我们的工作预测界面电荷转移是调节范德华异质结构中磁相的有效机制，并为自旋电子应用创造了机会。
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