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Solution-Processed, Highly Crystalline, and Oriented MAPbI3 Thin Films by Engineering Crystal-Growth Kinetics
Solar RRL ( IF 6.0 ) Pub Date : 2023-11-10 , DOI: 10.1002/solr.202300746 Riyas Ahmad 1, 2 , Pio John S. Buenconsejo 3 , Ming Pin Alan Lim 3 , P.C. Harikesh 1 , Vipinraj Sugathan 1 , Reinhard Haselsberger 4 , Teck Ming Koh 1 , Wei Lin Leong 5 , Nripan Mathews 1, 6 , Annalisa Bruno 1 , Maria-Elisabeth Michel-Beyerle 4 , Subodh G. Mhaisalkar 1, 6
Solar RRL ( IF 6.0 ) Pub Date : 2023-11-10 , DOI: 10.1002/solr.202300746 Riyas Ahmad 1, 2 , Pio John S. Buenconsejo 3 , Ming Pin Alan Lim 3 , P.C. Harikesh 1 , Vipinraj Sugathan 1 , Reinhard Haselsberger 4 , Teck Ming Koh 1 , Wei Lin Leong 5 , Nripan Mathews 1, 6 , Annalisa Bruno 1 , Maria-Elisabeth Michel-Beyerle 4 , Subodh G. Mhaisalkar 1, 6
Affiliation
Growing oriented and monocrystalline layers of lead halide perovskites over device substrates helps to harness their outstanding optoelectronic properties. Epitaxial growth of lead halide perovskites for device fabrication is limited by the lack of lattice-matched substrates and the requirement of compact pinhole-free films. Most optoelectronic devices use amorphous substrates, hindering oriented epitaxial growth. Herein, highly crystalline methylammonium lead iodide (MAPbI3) thin films over amorphous substrates are demonstrated by meticulously optimizing the nucleation and growth kinetics in spin-coating. The “epitaxial-like” films enable large-area crystalline layer fabrication, with larger than 100 μm spherulitic grains oriented along [200] and [224] planes. The compact, highly crystalline, and oriented films of MAPbI3 formed over indium tin oxide/SnO2 are used to fabricate perovskite solar cells (PSCs) with an area of 1 cm2. Despite the perovskite films being highly oriented and crystalline, the PSCs’ performances highlight the critical role the interfaces play in photovoltaic cells.
中文翻译:
通过工程晶体生长动力学进行溶液加工、高度结晶和定向 MAPbI3 薄膜
在器件基板上生长卤化铅钙钛矿的定向单晶层有助于利用其出色的光电特性。用于器件制造的卤化铅钙钛矿的外延生长受到晶格匹配基底的缺乏和紧凑的无针孔薄膜的要求的限制。大多数光电器件使用非晶衬底,阻碍了定向外延生长。在此,通过精心优化旋涂中的成核和生长动力学,展示了非晶基底上的高度结晶的甲基碘化铅铵(MAPbI 3)薄膜。“类外延”薄膜能够实现大面积结晶层制造,其中大于 100 μm 的球晶晶粒沿 [200] 和 [224] 平面取向。在氧化铟锡/SnO 2上形成的致密、高度结晶和取向的MAPbI 3薄膜用于制造面积为1 cm 2的钙钛矿太阳能电池(PSC) 。尽管钙钛矿薄膜具有高度取向和结晶性,但 PSC 的性能凸显了界面在光伏电池中发挥的关键作用。
更新日期:2023-11-10
中文翻译:
通过工程晶体生长动力学进行溶液加工、高度结晶和定向 MAPbI3 薄膜
在器件基板上生长卤化铅钙钛矿的定向单晶层有助于利用其出色的光电特性。用于器件制造的卤化铅钙钛矿的外延生长受到晶格匹配基底的缺乏和紧凑的无针孔薄膜的要求的限制。大多数光电器件使用非晶衬底,阻碍了定向外延生长。在此,通过精心优化旋涂中的成核和生长动力学,展示了非晶基底上的高度结晶的甲基碘化铅铵(MAPbI 3)薄膜。“类外延”薄膜能够实现大面积结晶层制造,其中大于 100 μm 的球晶晶粒沿 [200] 和 [224] 平面取向。在氧化铟锡/SnO 2上形成的致密、高度结晶和取向的MAPbI 3薄膜用于制造面积为1 cm 2的钙钛矿太阳能电池(PSC) 。尽管钙钛矿薄膜具有高度取向和结晶性,但 PSC 的性能凸显了界面在光伏电池中发挥的关键作用。