<br>Sb2S3 薄膜的晶粒工程可实现具有高开路电压的高效平面太阳能电池,Advanced Materials

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Sb2S3 薄膜的晶粒工程可实现具有高开路电压的高效平面太阳能电池
Advanced Materials ( IF 27.4 ) Pub Date : 2023-11-10 , DOI: 10.1002/adma.202305841
Xinnian Liu ₁ , Zhiyuan Cai ₂ , Lei Wan ₁ , Peng Xiao ₂ , Bo Che ₂ , Junjie Yang ₂ , Haihong Niu ₁ , Huan Wang ₁ , Jun Zhu ₃ , Yi-Teng Huang ₄ , Huimin Zhu _{4,

5} , Szymon J Zelewski ₆ , Tao Chen ₂ , Robert L Z Hoye ₄ , Ru Zhou _{1,

4}

Affiliation

Sb ₂ S ₃是一种有前途的用于高性能太阳能电池的环保半导体。但是，与许多其他多晶材料一样，Sb ₂ S ₃受到非辐射复合和晶界 (GB) 载流子散射的限制。这项工作展示了如何通过将适量的Ce ³⁺掺入用于Sb ₂ S ₃沉积的前体溶液中，将Sb ₂ S ₃薄膜中的GB密度从1068 ± 40显着降低至327 ± 23 nm µm ^-2 。通过对结构、形态和光电性质的广泛表征，并辅以计算，揭示了一个关键因素是在CdS/Sb ₂ S ₃界面处形成超薄Ce ₂ S ₃层，这可以降低界面能增加Sb ₂ S ₃与基底之间的粘附功，以促进Sb ₂ S ₃的异质成核，并促进横向晶粒生长。通过减少GBs和/或CdS/Sb ₂ S ₃异质界面处的非辐射复合，以及改善异质结处的载流子传输特性，这项工作实现了高性能Sb ₂ S ₃太阳能电池，功率转换效率达到7.66 %。达到了令人印象深刻的 796 mV 开路电压 ( V _OC )，这是迄今为止 Sb ₂ S ₃太阳能电池报道的最高电压。这项工作提供了一种同时调节Sb ₂ S ₃吸收膜的成核和生长以增强器件性能的策略。

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Grain Engineering of Sb2S3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit Voltage

Sb₂S₃ is a promising environmentally friendly semiconductor for high performance solar cells. But, like many other polycrystalline materials, Sb₂S₃ is limited by nonradiative recombination and carrier scattering by grain boundaries (GBs). This work shows how the GB density in Sb₂S₃ films can be significantly reduced from 1068 ± 40 to 327 ± 23 nm µm⁻² by incorporating an appropriate amount of Ce³⁺ into the precursor solution for Sb₂S₃ deposition. Through extensive characterization of structural, morphological, and optoelectronic properties, complemented with computations, it is revealed that a critical factor is the formation of an ultrathin Ce₂S₃ layer at the CdS/Sb₂S₃ interface, which can reduce the interfacial energy and increase the adhesion work between Sb₂S₃ and the substrate to encourage heterogeneous nucleation of Sb₂S₃, as well as promote lateral grain growth. Through reductions in nonradiative recombination at GBs and/or the CdS/Sb₂S₃ heterointerface, as well as improved charge-carrier transport properties at the heterojunction, this work achieves high performance Sb₂S₃ solar cells with a power conversion efficiency reaching 7.66%. An impressive open-circuit voltage (V_OC) of 796 mV is achieved, which is the highest reported thus far for Sb₂S₃ solar cells. This work provides a strategy to simultaneously regulate the nucleation and growth of Sb₂S₃ absorber films for enhanced device performance.

更新日期：2023-11-10

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