<br>1H-MoS2 纳米片上 1T′-MoS2 纳米带的相控生长,Advanced Materials

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1H-MoS2 纳米片上 1T′-MoS2 纳米带的相控生长
Advanced Materials ( IF 27.4 ) Pub Date : 2023-11-07 , DOI: 10.1002/adma.202307269
Yongji Wang ₁ , Wei Zhai ₁ , Yi Ren ₁ , Qinghua Zhang ₂ , Yao Yao ₁ , Siyuan Li ₁ , Qi Yang ₁ , Xichen Zhou ₁ , Zijian Li ₁ , Banlan Chi ₁ , Jinzhe Liang ₁ , Zhen He ₁ , Lin Gu ₃ , Hua Zhang _{1,

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Affiliation

二维异质结构正在成为传统半导体（例如硅、锗和氮化镓）的替代品，用于下一代电子学和光电子学。然而，二维异质结构的直接生长，特别是对于那些具有亚稳态相的异质结构，仍然具有挑战性。为了获得具有设计相的二维过渡金属二硫属化物（TMD），非常需要开发相控合成策略。在此，报道了一种简便的化学气相沉积方法来制备垂直的1H/1T'MoS ₂异相结构。通过简单地改变生长气氛，半金属1T'-MoS ₂可以在半导体1H-MoS ₂顶部原位生长，形成具有尖锐界面的垂直半导体/半金属1H/1T'异相结构。基于1H/1T′MoS ₂异相结构的集成器件表现出典型的整流行为，电流整流比约为10 ³ 。此外，基于1H/1T' MoS ₂的光电探测器在532 nm处实现了1.07 AW ^-1的响应度和小于10 ^-11 A的超低暗电流。上述结果表明1H/1T' MoS ₂异相结构可以成为未来整流器和光电探测器的有前途的候选者。重要的是，该方法可能为定制TMD相铺平道路，这可以帮助我们利用相工程策略来提高电子设备的性能。

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Phase-Controlled Growth of 1T′-MoS2 Nanoribbons on 1H-MoS2 Nanosheets

2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T′ MoS₂ heterophase structures. By simply changing the growth atmosphere, semimetallic 1T′-MoS₂ can be in situ grown on the top of semiconducting 1H-MoS₂, forming vertical semiconductor/semimetal 1H/1T′ heterophase structures with a sharp interface. The integrated device based on the 1H/1T′ MoS₂ heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈10³. Moreover, the 1H/1T′ MoS₂-based photodetector achieves a responsivity of 1.07 A W⁻¹ at 532 nm with an ultralow dark current of less than 10⁻¹¹ A. The aforementioned results indicate that 1H/1T′ MoS₂ heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.

更新日期：2023-11-07

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