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Substructure Hardening and Twinning Suppression in Graphene Oxide-Reinforced Magnesium Nanocomposites
Advanced Engineering Materials ( IF 3.4 ) Pub Date : 2023-11-03 , DOI: 10.1002/adem.202300835 M. Tahaghoghi 1 , A. Zarei-Hanzaki 1 , M. Jaskari 2 , LP Karjalainen 3 , Peter Minarik 4 , H.R. Abedi 5
Advanced Engineering Materials ( IF 3.4 ) Pub Date : 2023-11-03 , DOI: 10.1002/adem.202300835 M. Tahaghoghi 1 , A. Zarei-Hanzaki 1 , M. Jaskari 2 , LP Karjalainen 3 , Peter Minarik 4 , H.R. Abedi 5
Affiliation
The AZ31 magnesium matrix nanocomposites reinforced by 0, 1.2, 2.4 vol% graphene oxide (GO) nanoplatelets are thermomechanically fabricated through friction stir processing, and the influence of nanoplatelets on slip/twin activity is discussed in detail. The addition of GO significantly adjusts the characteristics of the developed substructure during the fabrication route and improves the matrix strength and work hardening rate in further mechanical loading. The presence of GO led to an increase in the length of low-angle boundaries and higher dislocation storage in their vicinity can be found, highlighting the hardening effect of dislocation movements and increased flow stresses. The well-defined developed substructure suppresses extension twinning leading to a twinning-to-slip deformation mode transition. Along with intensifying the substructure development, GO increases total intragranular strains developed during the fabrication and causes an improvement in the nanocomposites’ overall strength.
中文翻译:
氧化石墨烯增强镁纳米复合材料中的亚结构硬化和孪生抑制
通过搅拌摩擦加工热机械制备了由 0、1.2、2.4vol% 氧化石墨烯 (GO) 纳米片增强的 AZ31 镁基纳米复合材料,并详细讨论了纳米片对滑移/孪晶活性的影响。 GO的添加显着调整了制造过程中所开发的子结构的特性,并提高了进一步机械载荷下的基体强度和加工硬化率。 GO 的存在导致低角度边界的长度增加,并且在其附近可以发现更高的位错存储,突出了位错运动的硬化效应和增加的流动应力。明确的发达子结构抑制了延伸孪生,导致孪生到滑移变形模式的转变。随着亚结构发展的加强,GO 增加了制造过程中产生的总晶内应变,从而提高了纳米复合材料的整体强度。
更新日期:2023-11-03
中文翻译:
氧化石墨烯增强镁纳米复合材料中的亚结构硬化和孪生抑制
通过搅拌摩擦加工热机械制备了由 0、1.2、2.4vol% 氧化石墨烯 (GO) 纳米片增强的 AZ31 镁基纳米复合材料,并详细讨论了纳米片对滑移/孪晶活性的影响。 GO的添加显着调整了制造过程中所开发的子结构的特性,并提高了进一步机械载荷下的基体强度和加工硬化率。 GO 的存在导致低角度边界的长度增加,并且在其附近可以发现更高的位错存储,突出了位错运动的硬化效应和增加的流动应力。明确的发达子结构抑制了延伸孪生,导致孪生到滑移变形模式的转变。随着亚结构发展的加强,GO 增加了制造过程中产生的总晶内应变,从而提高了纳米复合材料的整体强度。