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Cryogenic spin Peltier effect detected by aRuO2−AlOxon-chip microthermometer
Physical Review Applied ( IF 3.8 ) Pub Date : 2023-11-02 , DOI: 10.1103/physrevapplied.20.054006
Takashi Kikkawa , Haruka Kiguchi , Alexey A. Kaverzin , Ryo Takahashi , Eiji Saitoh

We report electric detection of the spin Peltier effect (SPE) in a bilayer consisting of a Pt film and a Y3Fe5O12 (YIG) single crystal at the cryogenic temperature T as low as 2 K based on a RuO2AlOx on-chip thermometer film. By means of a reactive co-sputtering technique, we successfully fabricated RuO2AlOx films having a large temperature coefficient of resistance of approximately 100%K1 at around 2K. By using the RuO2AlOx film as an on-chip temperature sensor for a Pt/YIG device, we observe a SPE-induced temperature change on the order of sub-μK, the sign of which is reversed with respect to the external magnetic field B direction. We found that the SPE signal gradually decreases and converges to zero by increasing B up to 10T. The result is attributed to the suppression of magnon excitations due to the Zeeman-gap opening in the magnon dispersion of YIG, whose energy much exceeds the thermal energy at 2 K.

中文翻译:

aRuO2−AlOxon 芯片测温仪检测低温自旋珀耳帖效应

我们报告了双层中自旋珀耳帖效应(SPE)的电检测,该双层由电影和一个3512伊格)低温下的单晶时间低至 2 K 基于2-X片上温度计薄膜。通过反应共溅射技术,我们成功制备了2-X具有大电阻温度系数的薄膜大约为100%K-1大约2K。通过使用2-X薄膜作为片上温度传感器/伊格设备中,我们观察到 SPE 引起的温度变化约为亚量级μK,其符号相对于外部磁场相反方向。我们发现SPE信号逐渐减小并通过增加而收敛到零取决于10时间。该结果归因于磁振子色散中的塞曼能隙开放而抑制了磁振子激发伊格,其能量远超过 2 K 时的热能。
更新日期:2023-11-03
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