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Antiferroelectric AgNbO3@KH550 Doped PVDF/PMMA Composites with High Energy Storage Performance
Macromolecular Rapid Communications ( IF 4.2 ) Pub Date : 2023-10-31 , DOI: 10.1002/marc.202300485
Zhuo Wang 1 , Jinteng Kang 1 , Dan Wu 1 , Ying Xue 1 , Zhihui Yi 1
Macromolecular Rapid Communications ( IF 4.2 ) Pub Date : 2023-10-31 , DOI: 10.1002/marc.202300485
Zhuo Wang 1 , Jinteng Kang 1 , Dan Wu 1 , Ying Xue 1 , Zhihui Yi 1
Affiliation
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The residual polarization of antiferroelectric ceramics is very small, yet they possess high energy storage density and efficiency. Incorporating antiferroelectric ceramic particles into a polymer matrix is beneficial for improving the energy storage performance of composites. However, excessive amounts of ceramic particles can lead to aggregation within the polymer, resulting in defects and a significant reduction in composite film performance. In this study, the antiferroelectric AgNbO3 is selected as the filler and modified with silane coupling agent KH550. poly(vinylidene fluoride) (PVDF) and polymethyl methacrylate (PMMA) are blended as the matrix, and the energy storage performance of the composite is improved by adjusting the additional amount of PVDF. The structure, dielectric properties, and energy storage properties of the composites are systematically studied. The results show that hydrogen bonds are formed between PVDF and PMMA, and PVDF and PMMA are tightly bonded under the action of hydrogen bonds. The compatibility of PVDF with PMMA is optimal when the mass fraction of PVDF is 30 wt%. Moreover, with the synergistic effect of the antiferroelectric filler AgNbO3, the breakdown strength of AgNbO3/PVDF/PMMA composites reaches 430 kV mm−1, and the energy storage density reaches 14.35 J cm−3.
中文翻译：
具有高储能性能的反铁电AgNbO3@KH550掺杂PVDF/PMMA复合材料
反铁电陶瓷的残余极化很小，但具有很高的储能密度和效率。将反铁电陶瓷颗粒掺入聚合物基体有利于提高复合材料的储能性能。然而，过量的陶瓷颗粒会导致聚合物内聚集，从而导致缺陷并显着降低复合膜的性能。本研究选择反铁电AgNbO 3作为填料，并用硅烷偶联剂KH550进行改性。以聚偏二氟乙烯（PVDF）和聚甲基丙烯酸甲酯（PMMA）共混为基体，通过调整PVDF的添加量来提高复合材料的储能性能。对复合材料的结构、介电性能和储能性能进行了系统研究。结果表明，PVDF与PMMA之间形成氢键，PVDF与PMMA在氢键作用下紧密结合。当PVDF的质量分数为30wt%时，PVDF与PMMA的相容性最佳。此外，在反铁电填料AgNbO 3的协同作用下，AgNbO 3 /PVDF/PMMA复合材料的击穿强度达到430 kV mm -1 ，储能密度达到14.35 J cm -3 。
更新日期：2023-10-31
中文翻译：
具有高储能性能的反铁电AgNbO3@KH550掺杂PVDF/PMMA复合材料
反铁电陶瓷的残余极化很小，但具有很高的储能密度和效率。将反铁电陶瓷颗粒掺入聚合物基体有利于提高复合材料的储能性能。然而，过量的陶瓷颗粒会导致聚合物内聚集，从而导致缺陷并显着降低复合膜的性能。本研究选择反铁电AgNbO 3作为填料，并用硅烷偶联剂KH550进行改性。以聚偏二氟乙烯（PVDF）和聚甲基丙烯酸甲酯（PMMA）共混为基体，通过调整PVDF的添加量来提高复合材料的储能性能。对复合材料的结构、介电性能和储能性能进行了系统研究。结果表明，PVDF与PMMA之间形成氢键，PVDF与PMMA在氢键作用下紧密结合。当PVDF的质量分数为30wt%时，PVDF与PMMA的相容性最佳。此外，在反铁电填料AgNbO 3的协同作用下，AgNbO 3 /PVDF/PMMA复合材料的击穿强度达到430 kV mm -1 ，储能密度达到14.35 J cm -3 。
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