通过 CsPbX3（X = Br 和 I）量子点界面层促进全无机 CsPbBr3 钙钛矿太阳能电池中的电荷提取,ACS Applied Energy Materials

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通过 CsPbX3（X = Br 和 I）量子点界面层促进全无机 CsPbBr3 钙钛矿太阳能电池中的电荷提取
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2023-11-01 , DOI: 10.1021/acsaem.3c01855
Jian Ni _{1,

2,

3} , Jiayi Guan _{1,

2,

3} , Minghao Hu _{1,

2,

3} , Rufeng Wang _{1,

2,

3} , Zhiwei Yang _{1,

2,

3} , Jun Li _{1,

2,

3} , Shuai Zhang _{1,

2,

3} , Sen Li ₄ , Juan Li _{1,

2,

3} , Hongkun Cai _{1,

2,

3} , Jianjun Zhang _{1,

2,

3}

Affiliation

无机CsPbBr ₃钙钛矿太阳能电池（PSC）因其成本低廉以及优异的耐紫外光、氧气和温度而受到广泛关注。然而，由于CsBr在N,N-二甲基甲酰胺中的溶解度较低，CsPbBr ₃结晶的机理相对复杂。_{此外，CsPbBr 3}和空穴传输层(HTL)(例如Spiro-OMeTAD)之间过高的价带偏移是限制效率提高的主要因素。本文基于多步旋涂制备多晶CsPbBr ₃自上而下的垂直结晶机制，通过调节退火时间和CsBr的沉积数量，获得了转化为CsPbBr _{3的最佳窗口期。}然后，钙钛矿量子点（QD）被用作钙钛矿和HTL之间的中间层，它可以扩散到晶界并钝化CsPbBr ₃薄膜中的缺陷。通过 QD 改性制造的太阳能电池的冠军功率转换效率 (PCE) 为 7.23%，而未改性器件的功率转换效率 (PCE) 为 5.15%。此外，由于QD涂层的高疏水性，没有封装的CsPbBr ₃ PSC器件在大气条件下表现出增强的长期稳定性。最后，由于所制备的CsPbBr ₃优异的稳定性加上量子点修饰，最终获得了高PCE和稳定的器件。

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Promoted Charge Extraction in All-Inorganic CsPbBr3 Perovskite Solar Cells by a CsPbX3 (X = Br and I) Quantum Dot Interface Layer

Inorganic CsPbBr₃ perovskite solar cells (PSCs) have attracted wide attention due to their low cost and excellent resistance to ultraviolet light, oxygen, and temperature. However, the mechanism of CsPbBr₃ crystallization is relatively complex due to the lower solubility of CsBr in N,N-dimethylformamide. Also, the excessively high valence band offset between CsPbBr₃ and a hole transport layer (HTL), such as Spiro-OMeTAD, is the main factor limiting the improvement in efficiency. Herein, based on the top-down vertical crystallization mechanism of polycrystalline CsPbBr₃ prepared by multistep spin coating, we obtained the optimal window period for conversion to CsPbBr₃ through regulating the annealing time and the deposition number of CsBr. Then, perovskite quantum dots (QDs) were used as an intermediate layer between the perovskite and HTL, which can diffuse into grain boundaries and passivate defects in the CsPbBr₃ film. The solar cell fabricated by QD modification yields a champion power conversion efficiency (PCE) of 7.23% compared to 5.15% for the unmodified devices. Moreover, the CsPbBr₃ PSC device without encapsulation exhibits an enhanced long-term stability under atmospheric conditions due to the high hydrophobicity of the QD coating. Finally, high-PCE and stable devices were ultimately obtained due to the excellent stability of the prepared CsPbBr₃ coupled with quantum dot modification.

更新日期：2023-11-01

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