High energy/fluence (10 MeV/2.5 × 10 ions·cm) proton radiation effects on the performance of HfZrO (HZO)-based ferroelectric field effect transistors (FeFETs) memory with various Zr content were studied for the first time. As the Zr content reaches 67 % (tetragonal-phase rich), degraded de-trapping, switching speed, memory window (MW) and polarization-voltage slope occur due to more oxygen vacancies (Vo) generation upon proton radiation resulting from intrinsically higher amount Vo. For FeFETs (Zr: 50 %), irradiated devices exhibit a MW of ∼ 2.4 V while other characteristics show almost independent of radiation. The irradiated FeFETs also reveal good endurance up to 10 cycles by recovery and 10-year retention. The higher resilience towards radiation for FeFETs (Zr: 50 %) is obtained since Vo redistribution is dominant with negligible Vo generation, making it eligible for space missions.

中文翻译：

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HfZrOx 基 FeFET 存储器的 Zr 含量对质子辐射弹性的影响

首次研究了高能量/注量（10 MeV/2.5 × 10 ions·cm）质子辐射对不同Zr含量的HfZrO（HZO）基铁电场效应晶体管（FeFET）存储器性能的影响。当 Zr 含量达到 67%（富含四方相）时，由于本质上更高的量导致质子辐射时产生更多的氧空位 (Vo)，因此脱俘获、转换速度、存储窗口 (MW) 和极化电压斜率都会降低沃。对于 FeFET（Zr：50%），辐照器件的 MW 约为 2.4 V，而其他特性几乎与辐射无关。经过辐照的 FeFET 还表现出良好的耐久性，可恢复 10 个周期并保持 10 年。 FeFET (Zr: 50%) 具有更高的抗辐射能力，因为 Vo 的重新分布占主导地位，Vo 的生成可以忽略不计，使其适合太空任务。