The formation of composites by loading co-catalysts on semiconductor photocatalysts to improve hydrogen (H₂) evolution performance is a feasible strategy. Metallic 1T phase molybdenum disulfide (MoS₂) as cocatalysts were decorated on zinc indium sulfide (ZnIn₂S₄) nanoflowers by a grinding method to construct 1T-MoS₂@ZnIn₂S₄ composites. The H₂ production rate of 1T-MoS₂@ZnIn₂S₄ composites with optimum 7 wt% 1T-MoS₂ loading achieves 15.6 mmol g⁻¹ h⁻¹, 5.5 times higher than ZnIn₂S₄ nanoflowers. The apparent quantum efficiency (AQY) increases from 3.1 % (ZnIn₂S₄ nanoflowers) to 13.0 % (1T-MoS₂@ZnIn₂S₄ composites) under the wavelength light irradiation at λ = 370 nm. The loading of metallic 1T-MoS₂ with abundant edge and substrate active sites on ZnIn₂S₄ can enhance visible light absorption, promote the transfer of electrons, and inhibit carrier recombination, thereby improving photocatalytic performance. This work offers inspiration for the design of composite photocatalysts with efficient photocatalytic capabilities.

通过在半导体光催化剂上负载助催化剂形成复合材料来提高析氢（H ₂）性能是一种可行的策略。采用研磨法将金属1T相二硫化钼(MoS ₂ )作为助催化剂修饰在硫化锌铟(ZnIn ₂ S ₄ )纳米花上构建1T-MoS ₂ @ZnIn ₂ S ₄复合材料。最佳7 wt% 1T-MoS _{2负载量的1T-MoS 2} @ZnIn ₂ S ₄复合材料的H ₂产率达到15.6 mmol g ^-1 h ^-1，比ZnIn ₂ S ₄纳米花高5.5倍。在λ = 370 nm波长光照射下，表观量子效率（AQY）从3.1%（ZnIn ₂ S ₄纳米花）增加到13.0%（1T-MoS ₂ @ZnIn ₂ S _{4复合材料）。在ZnIn 2} S ₄上负载具有丰富边缘和基底活性位点的金属1T-MoS ₂可以增强可见光吸收，促进电子转移，抑制载流子复合，从而提高光催化性能。这项工作为具有高效光催化能力的复合光催化剂的设计提供了灵感。