晶格匹配工程驱动大面积二维 CeO2 的生长，用于高性能光电探测,Advanced Materials Interfaces

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晶格匹配工程驱动大面积二维 CeO2 的生长，用于高性能光电探测
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2023-10-29 , DOI: 10.1002/admi.202300732
Keyu Chen ₁ , Guan Yu Chen _{1,

2} , Xinyi Hu ₁ , Hao Wu ₃ , Mingwei Gu ₃ , Yange Luan ₂ , Baoyue Zhang ₂ , Yihong Hu ₂ , Yinfen Cheng ₁ , Tao Tang ₁ , Haibo Huang ₃ , Liguo Chen ₃ , Jian Zhen Ou _{1,

2}

Affiliation

晶格中掺入的少量稀土（RE）原子通过RE独特的原子电子结构极大地调节了掺杂晶体的光学、电学、磁学和催化性能。稀土氧化物的降维可以进一步发挥其独特的特性并拓宽其应用范围。_{(111)取向CeO 2}薄膜的紫外光电检测性能受到晶界、缺陷和应变的存在的限制。因此，单晶2D CeO ₂由于没有晶界和缺陷，因此在光电探测方面很有前景。然而，横向尺寸超过100 µm的大尺寸高质量2D CeO ₂的合成具有挑战性。在这项工作中，通过盐辅助化学气相沉积方法在蓝宝石衬底上合成了厚度为3.9 nm、横向尺寸为120 µm的CeO ₂单晶，其中在衬底和2D CeO _{2之间形成了中间绝缘CeAlO}₃层。增强晶格匹配，从而有利于大面积生长。基于2D CeO ₂的光电探测器表现出395至532 nm的光响应，这可能归因于异质界面处引起的微应变窄带隙。在395 nm激光照射下，光响应度达到43.6 A W ^-1，探测度达到7.58 × 10 ^{11 Jones。}此外，在没有门控偏置的情况下实现了亚毫秒级开关动力学，这比其他报道的基于稀土氧化物的光电探测器有了显着改善。这项工作展示了合成大尺寸高质量二维稀土氧化物的可能性及其在高性能光电器件中的巨大潜力。

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Lattice Matching Engineering Driven Growth of Large-Area 2D CeO2 for High-Performance Photodetection

Few rare-earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale-down of RE oxides can further promote their unique traits and broaden their applications. The UV photodetection performance of (111) oriented CeO₂ thin film is limited by the existence of grain boundaries, defects, and strains. Consequently, single-crystal 2D CeO₂ is promising for photodetection as it lacks of grain boundaries and defects. However, the synthesis of large-sized high-quality 2D CeO₂ with lateral dimensions over 100 µm is challenging. In this work, a 3.9 nm thick CeO₂ single crystal with 120 µm lateral size is synthesized over a sapphire substrate through a salt-assisted chemical vapor deposition method, in which an intermediate insulating CeAlO₃ layer is formed between the substrate and 2D CeO₂ to enhance the crystal lattice matching and therefore facilitates the large area growth. The photodetector based on 2D CeO₂ exhibits a photo response from 395 to 532 nm, possibly ascribed to a micro-strain narrowed bandgap induced at the heterointerface. The photoresponsivity reaches 43.6 A W⁻¹ while the detectivity reaches 7.58 × 10¹¹ Jones under the 395 nm laser irradiation. Besides, the sub-ms switching kinetics is achieved without gating bias, which is significantly improved over other reported RE oxides-based photodetectors. This work demonstrates the possibility of the synthesis of large-size high-quality 2D RE oxides and their strong potential in high-performance optoelectronic devices.

更新日期：2023-10-29

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