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Long-Persistent Photoconductivity in Transistor Structures Made from Thin ZrS3-Films
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-10-24 , DOI: 10.1021/acsaelm.3c01163
Lars Thole 1 , Asem Ben Kalefa 1 , Christopher Belke 1 , Sonja Locmelis 2 , Lina Bockhorn 1 , Peter Behrens 2, 3 , Rolf J. Haug 1, 3
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-10-24 , DOI: 10.1021/acsaelm.3c01163
Lars Thole 1 , Asem Ben Kalefa 1 , Christopher Belke 1 , Sonja Locmelis 2 , Lina Bockhorn 1 , Peter Behrens 2, 3 , Rolf J. Haug 1, 3
Affiliation
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In the search for two-dimensional (2D) materials, transition-metal trichalcogenides (TMTCs) have emerged as promising candidates for optoelectronic applications. Here, we show a very long-lasting persistent photoconductivity (PPC) over several hours in thin films of the TMTC zirconium trisulfide (ZrS3) at room temperature when illuminated with a 470 nm LED. ZrS3 crystals were grown using chemical vapor transport. UV–vis spectroscopy showed an indirect band gap of 1.81 eV and an Urbach energy of 83 meV, indicating that the system has a large number of defects. Transistor measurements on thin layers with thicknesses varying between 19 and 50 nm showed ZrS3 to be an n-type semiconductor. The conductivity increases under illumination, and it only reaches the original state several hours after switching off the illumination. This PPC can be described by using a stretched exponential function. On top of that, the sum of three exponential functions with tree different relaxation times fits the observed PPC nearly equally well. This shows that three processes dominate the relaxation. The three observed processes can be differentiated with respect to their origin by their dependence on the thickness of the thin layers.
中文翻译：
ZrS3 薄膜制成的晶体管结构具有持久光电导性
在寻找二维 (2D) 材料的过程中，过渡金属三硫属化物 (TMTC) 已成为光电应用的有希望的候选材料。在这里，我们在室温下用 470 nm LED 照射时， TMTC 三硫化锆 (ZrS 3 )薄膜在几个小时内表现出非常持久的持久光电导率 (PPC) 。使用化学气相传输生长ZrS 3晶体。紫外可见光谱显示间接带隙为1.81 eV，乌尔巴赫能量为83 meV，表明该体系存在大量缺陷。对厚度在 19 至 50 nm 之间变化的薄层进行的晶体管测量表明，ZrS 3是一种 n 型半导体。电导率在光照下增加，并且在关闭光照后数小时才达到原始状态。该 PPC 可以使用拉伸指数函数来描述。最重要的是，具有树不同松弛时间的三个指数函数的总和几乎同样适合观察到的 PPC。这表明三个过程主导松弛。三个观察到的过程可以通过其对薄层厚度的依赖性来区分其起源。
更新日期：2023-10-24
中文翻译：
ZrS3 薄膜制成的晶体管结构具有持久光电导性
在寻找二维 (2D) 材料的过程中，过渡金属三硫属化物 (TMTC) 已成为光电应用的有希望的候选材料。在这里，我们在室温下用 470 nm LED 照射时， TMTC 三硫化锆 (ZrS 3 )薄膜在几个小时内表现出非常持久的持久光电导率 (PPC) 。使用化学气相传输生长ZrS 3晶体。紫外可见光谱显示间接带隙为1.81 eV，乌尔巴赫能量为83 meV，表明该体系存在大量缺陷。对厚度在 19 至 50 nm 之间变化的薄层进行的晶体管测量表明，ZrS 3是一种 n 型半导体。电导率在光照下增加，并且在关闭光照后数小时才达到原始状态。该 PPC 可以使用拉伸指数函数来描述。最重要的是，具有树不同松弛时间的三个指数函数的总和几乎同样适合观察到的 PPC。这表明三个过程主导松弛。三个观察到的过程可以通过其对薄层厚度的依赖性来区分其起源。
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