Semiconductive metal–organic frameworks (MOFs) have attracted great interest for the electronic applications. However, dark currents of present hybrid organic–inorganic materials are 1000–10,000 times higher than those of commercial inorganic detectors, leading to poor charge transportation. Here, we demonstrate a ZIF-8 (Zn(mim)₂, mim = 2-methylimidazolate) wafer with ultra-low dark current of 1.27 pA·mm⁻² under high electric fields of 322 V·mm⁻¹. The isostatic pressing preparation process provides ZIF-8 wafers with good transmittance. Besides, the presence of redox-active metals and small spatial separation between components promotes the charge hopping. The ZIF-8-based semiconductor detector shows promising X-ray detection sensitivity of 70.82 µC·Gy⁻¹·cm⁻² with low doses exposures, contributing to superior X-ray imaging capability with a relatively high spatial resolution of 1.2 Ip·mm⁻¹. Simultaneously, good peak discrimination with the energy resolution of ∼ 43.78% is disclosed when the detector is illuminated by uncollimated ²⁴¹Am@5.48 MeV α-particles. These results provide a broad prospect of MOFs for future radiation detection applications.

半导体金属有机框架（MOF）在电子应用中引起了极大的兴趣。然而，现有有机-无机杂化材料的暗电流比商业无机探测器高1000-10,000倍，导致电荷传输不良。^{在这里，我们展示了在322 V·mm -1}的高电场下具有1.27 pA·mm ^-2的超低暗电流的ZIF-8（Zn（mim）₂ ，mim = 2-甲基咪唑酯）晶片。等静压制备工艺使ZIF-8晶圆具有良好的透过率。此外，氧化还原活性金属的存在和组分之间的小空间分离促进了电荷跳跃。^{基于ZIF-8的半导体探测器在低剂量暴露下表现出70.82 µC·Gy -1} ·cm ^-2的X射线探测灵敏度，有助于实现卓越的X射线成像能力，并具有1.2 Ip·mm的相对较高的空间分辨率⁻¹。同时，当探测器被非准直²⁴¹ Am@5.48 MeV α 粒子照射时，具有良好的峰值辨别能力，能量分辨率约为 43.78%。这些结果为MOFs未来辐射检测应用提供了广阔的前景。