对“(0001) Al2O3 上分子束外延的 Ga2O3 和 In2O3 成核窗口”的修正,Crystal Growth & Design

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对“(0001) Al2O3 上分子束外延的 Ga2O3 和 In2O3 成核窗口”的修正
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2023-10-19 , DOI: 10.1021/acs.cgd.3c01087
Alexander Karg , Justin A. Bich , Adrian Messow , Marco Schowalter , Stephan Figge , Andreas Rosenauer , Patrick Vogt , Martin Eickhoff

上述手稿中图 2 的插图与相关图标题不匹配。由于后者包含更有意义的参数，即生长速率 Γ 和等离子体功率P _rf，因此校正后的图 2 如下所示，应考虑代替原始图。这一变化对得出的结论没有影响，因为在化学计量条件下 Γ 和 BEP _Ga直接相关。图 2.在 β-Ga ₂ O ₃缓冲层上不同等离子体功率P _rf下，Ga₂ O ₃的生长速率与 BEP _{Ga的函数关系。}所有系列在富氧和富金属状态下都显示出相同的斜率比，遵循预测值：m _M = -0.5 m _O。插图中绘制了化学计量生长条件下提取的 Ga ₂ O ₃生长速率与P _rf的函数关系。它表明随着P _rf可用于Ga ₂ O ₃生长，活性氧吸附物呈线性增加。这篇文章尚未被其他出版物引用。图 2.在 β-Ga ₂ O ₃缓冲层上不同等离子体功率P _rf下，Ga₂ O ₃的生长速率与 BEP _{Ga的函数关系。}所有系列在富氧和富金属状态下都显示出相同的斜率比，遵循预测值：m _M = -0.5 m _O。插图中绘制了化学计量生长条件下提取的 Ga ₂ O ₃生长速率与P _rf的函数关系。它表明随着P _rf可用于Ga ₂ O ₃生长，活性氧吸附物呈线性增加。

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Correction to “Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3”

The inset of Figure 2 in the above-mentioned manuscript does not match the related figure caption. As the latter contains more meaningful parameters, namely, the growth rate Γ and the plasma power P_rf, the corrected Figure 2 is shown below and should be considered instead of the original figure. This change has no impact on the drawn conclusions as at stoichiometric conditions Γ and BEP_Ga are directly linked. Figure 2. Growth rates of Ga₂O₃ as a function of the BEP_Ga for different plasma powers P_rf on a β-Ga₂O₃ buffer layer. All series show the same slope ratio in the oxygen- and the metal-rich regime, following the predicted values: m_M = −0.5m_O. The extracted growth rate of Ga₂O₃ at stoichiometric growth conditions is plotted as a function of P_rf in the inset. It indicates a linear increase of active oxygen-adsorbates with P_rf being available for Ga₂O₃ growth. This article has not yet been cited by other publications. Figure 2. Growth rates of Ga₂O₃ as a function of the BEP_Ga for different plasma powers P_rf on a β-Ga₂O₃ buffer layer. All series show the same slope ratio in the oxygen- and the metal-rich regime, following the predicted values: m_M = −0.5m_O. The extracted growth rate of Ga₂O₃ at stoichiometric growth conditions is plotted as a function of P_rf in the inset. It indicates a linear increase of active oxygen-adsorbates with P_rf being available for Ga₂O₃ growth.

更新日期：2023-10-19

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