A-type antiferromagnetic half-metal has great application potential in memory and spintronic devices. GdI₂ bilayer is an A-type antiferromagnet with intralayer ferromagnetic coupling and interlayer antiferromagnetic coupling. Under an electric field, the spin degeneracy of the GdI₂ bilayer is broken. As an electric field exceeds the critical electric field of 0.08 V/Å, the GdI₂ bilayer exhibits antiferromagnetic half-metallicity. The bi-GdI₂/In₂Se₃ heterojunction achieves the transition for GdI₂ bilayer from semiconductor to half-metal and the ferroelectric memory can be achieved. The In₂Se₃/bi-GdI₂/In₂Se₃ heterojunction realizes the switching of the spin direction of the half-metal for GdI₂ bilayer and the spin field effect transistors can be achieved. The bi-GdI₂/bi-In₂Se₃ heterojunction achieves functions similar to the bi-GdI₂/In₂Se₃ heterojunction. The band transition mechanism of these heterojunctions is mainly caused by the charge transfer at the GdI₂ and In₂Se₃ interfaces and the polarization field of In₂Se₃. The construction of heterojunction and biaxial strain can significantly regulate the magnetic anisotropy energy (MAE). The tensile strain increases the total MAE, while the compressive strain decreases the total MAE. The heterojunctions under biaxial strain always keep the easy magnetization axis in the xy plane. Based on the GdI₂ bilayer, applying an electric field or constructing a van der Waals heterojunction can achieve antiferromagnetic half-metal.

A型反铁磁半金属在存储器和自旋电子器件中具有巨大的应用潜力。GdI ₂双层是一种具有层内铁磁耦合和层间反铁磁耦合的A型反铁磁体。在电场作用下，GdI ₂双层的自旋简并性被破坏。当电场超过0.08 V/Å的临界电场时，GdI ₂双层表现出反铁磁半金属性。bi-GdI ₂ /In ₂ Se _{3异质结实现了GdI 2}双层从半导体到半金属的转变，从而实现了铁电存储器。In ₂ Se ₃ /bi-GdI ₂ /In ₂ Se _{3异质结实现了GdI 2}双层半金属自旋方向的切换，可以实现自旋场效应晶体管。bi-GdI ₂ /bi-In ₂ Se ₃异质结实现了与bi-GdI ₂ /In ₂ Se ₃异质结类似的功能。_{这些异质结的能带跃迁机制主要是由GdI 2}和In ₂ Se ₃界面处的电荷转移以及In ₂ Se ₃的极化场引起的。异质结和双轴应变的构建可以显着调节磁各向异性能量（MAE）。拉伸应变增加了总 MAE，而压缩应变则减少了总 MAE。双轴应变下的异质结始终将易磁化轴保持在xy平面内。基于GdI ₂双层，施加电场或构建范德华异质结可以实现反铁磁半金属。