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Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide
Nano Research ( IF 9.5 ) Pub Date : 2023-10-14 , DOI: 10.1007/s12274-023-6138-4
Xue Zhao , Ningfei Gao , Zeyao Zhang , Qidong Liu , Jian Sheng , Yijie Hu , Ruoming Li , Haitao Xu , Lianmao Peng , Yan Li

The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO2, which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.



中文翻译:

仅用一氧化碳选择性生长半导体单壁碳纳米管

半导体单壁碳纳米管(s-SWCNT)的选择性生长在以纳米电子学为代表的许多高端应用中具有重要意义。在这里,我们开发了一种通用方法,使用一氧化碳(CO)作为催化剂还原剂和单组分碳原料,在大气压下使用双金属催化剂在稳定温度(ST)切割石英上生长水平排列的s-SWCNT阵列。CO的歧化不仅产生用于SWCNT生长的碳物质,而且还产生CO 2,​​CO 2 可以充当原位蚀刻剂以去除无定形碳和金属管。双金属催化剂和石英基板的使用通过缩小生长的单壁碳纳米管阵列的直径分布来促进选择性蚀刻。在优化的条件下,我们利用CoCu催化剂实现了水平排列的s-SWCNT阵列的选择性生长,其含量高于97%,并通过所制造的场效应晶体管器件的拉曼表征和电学测量证实了这一点。这种基于 CO 的 s-SWCNT 选择性生长工艺已通过广泛的生长窗口和对其他双金属催化剂(如 FeCu 和 CoMn)的适用性证明了其可行性和普遍性。它在获得用于可扩展制造基于碳纳米管的器件的半导体通道材料方面具有实际潜力。

更新日期:2023-10-14
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