Inorganic cesium lead triiodide perovskite has shown great potential in photovoltaic applications. Currently, the preparation of high-quality β- or γ-phase CsPbI₃ films largely relies on the DMAPbI₃ (dimethylammonium [DMA]) or “HPbI₃”-assisted crystallization method, which unfortunately causes DMAPbI₃ residue and deteriorates photovoltaic performance and stability. Herein, a universal hydrogen-bonding-facilitated DMA extraction method is developed to fabricate high-quality γ-CsPbI₃ films. Theoretical and experimental evidence manifests that the hydrogen bonds formed between polyacrylic acid (PAA) and DMAPbI₃ decrease the DMA escape energy barrier, and this not only brings ahead the decomposition process of DMAPbI₃ but also accelerates the crystallization kinetics of CsPbI₃, resulting in pinhole-free CsPbI₃ films without any trace of DMAPbI₃ residue and an extended fabrication humidity (up to 80% relative humidity [RH]) and temperature window. Thanks to the environmentally benign crystallization, the CsPbI₃ solar cells with dopant-free poly(3-hexylthiophene) (P3HT) yield a high efficiency of 20.25% and superior moisture and operational stability.

无机三碘化铯铅钙钛矿在光伏应用中显示出巨大的潜力。目前，高质量β相或γ相CsPbI ₃薄膜的制备很大程度上依赖于DMAPbI ₃（二甲基铵[DMA]）或“HPbI ₃ ”辅助结晶方法，不幸的是，这会导致DMAPbI ₃残留并恶化光伏性能和稳定。在此，开发了一种通用的氢键促进DMA提取方法来制造高质量的γ-CsPbI ₃薄膜。_{理论和实验证据表明，聚丙烯酸（PAA）和DMAPbI 3}之间形成的氢键降低了DMA逃逸能垒，这不仅提前了DMAPbI ₃的分解过程，而且加速了CsPbI ₃的结晶动力学，从而导致无针孔 CsPbI _{3薄膜，没有任何 DMAPbI 3}残留物痕迹，并且具有扩展的制造湿度（高达 80% 相对湿度 [RH]）和温度窗口。得益于对环境无害的结晶，采用无掺杂剂聚（3-己基噻吩）（P3HT）的CsPbI _{3太阳能电池可实现 20.25% 的高效率以及卓越的湿度和运行稳定性。}