Rb2Sn4Q9（Q = S 和 Se）：具有高激光诱导损伤阈值的低维非中心对称硫族化物,Chemistry of Materials

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Rb2Sn4Q9（Q = S 和 Se）：具有高激光诱导损伤阈值的低维非中心对称硫族化物
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-10-06 , DOI: 10.1021/acs.chemmater.3c01962
Abishek K. Iyer ₁ , Seung Heon Ha ₂ , Michael J. Waters ₃ , Thomas S. Ie ₁ , Seung Han Shin ₂ , James M. Rondinelli ₃ , J. I. Jang ₂ , Mercouri G. Kanatzidis ₁

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低维硫属化物在红外区域显示出有前景的非线性光学（NLO）响应。Rb ₂ Sn ₄ Q ₉ (Q = S 和 Se) 在非中心对称正交空间群P 2 ₁ 2 ₁ 2 ₁中结晶。这些化合物包含由层间的 Rb 原子隔开的[Sn ₄ Q ₉ ] ^2-链阴离子层。差热分析表明，Rb ₂ Sn ₄ Se ₉同成分熔化，熔点温度为472℃，结晶温度为443℃，没有可观察到的相变，使其有望用于大晶体生长。_{与其他有前途的 NLO 材料（如 γ-NaAsSe 2}）所面临的挑战相比，这些化合物的空气和水稳定性使其更适合应用。Rb ₂ Sn ₄ S ₉和Rb ₂ Sn ₄ Se ₉的能带隙分别为2.56和1.75eV。发现由 Rb ₂ Sn ₄ Q ₉产生的二次谐波对于大于 75 μm 的颗粒尺寸是非相位匹配的，其中 Rb ₂ Sn ₄ Se ₉在 1800 nm 处具有 χ ⁽²⁾ = 36.7 ± 7.4 pm/V。两种材料的硫化物和硒化物均表现出较高的激光诱导损伤阈值 (LIDT)，分别为 1.8 GW/cm ²和 0.2 GW/cm ^{2 ，明显大于基准参考材料 AgGaSe}₂ (0.1毛重/厘米² )。高 LIDT 值使这些材料有望用于涉及强烈光-物质相互作用的 NLO 应用。

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Rb2Sn4Q9 (Q = S and Se): Low-Dimensional Noncentrosymmetric Chalcogenides with High Laser-Induced Damage Threshold

Low-dimensional chalcogenides have shown promising nonlinear optical (NLO) responses in the infrared region. Rb₂Sn₄Q₉ (Q = S and Se) crystallizes in the noncentrosymmetric orthorhombic space group P2₁2₁2₁. These compounds comprise an anionic layer of [Sn₄Q₉]^2– chains separated by the Rb atoms located between the layers. Differential thermal analysis shows that Rb₂Sn₄Se₉ melts congruently, having a melting point temperature of 472 °C and a crystallization temperature of 443 °C and no observable phase transitions, making them promising for large crystal growth. These compounds’ air- and water-stability make them more viable for application compared to the challenges faced in other promising NLO materials like γ-NaAsSe₂. The Rb₂Sn₄S₉ and Rb₂Sn₄Se₉ have energy band gaps of 2.56 and 1.75 eV, respectively. Second harmonic generation from Rb₂Sn₄Q₉ was found to be nonphase matchable for particle size above 75 μm, with Rb₂Sn₄Se₉ having a χ⁽²⁾ = 36.7 ± 7.4 pm/V at 1800 nm. Both materials show a high laser-induced damage threshold (LIDT) of 1.8 GW/cm² and 0.2 GW/cm² for the sulfide and selenide compounds, respectively, which are significantly larger than that of the benchmark reference material, AgGaSe₂ (0.1 GW/cm²). The high LIDT values make these materials promising for NLO applications involving intense light–matter interactions..

更新日期：2023-10-06

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