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Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure
Applied Physics Letters ( IF 3.5 ) Pub Date : 2023-10-04 , DOI: 10.1063/5.0172010 Yat Hon Ng 1, 2 , Zheyang Zheng 1, 2 , Li Zhang 2 , Ruizi Liu 2 , Tao Chen 1, 2 , Sirui Feng 1, 2 , Qiming Shao 2 , Kevin J. Chen 1, 2
Applied Physics Letters ( IF 3.5 ) Pub Date : 2023-10-04 , DOI: 10.1063/5.0172010 Yat Hon Ng 1, 2 , Zheyang Zheng 1, 2 , Li Zhang 2 , Ruizi Liu 2 , Tao Chen 1, 2 , Sirui Feng 1, 2 , Qiming Shao 2 , Kevin J. Chen 1, 2
Affiliation
The p-GaN/AlGaN/GaN heterostructure, predominantly epitaxially grown on large-scale silicon wafers, has been widely used for producing consumer power switching devices and recently manifested favorable for developing GaN-based complementary devices and circuits. This work investigates the hole distribution and transport in this structure based on wide-temperature-range (20–600 K) Hall measurements and TCAD simulations. It is revealed that the p-channel thereof is composed of the bulk holes in the p-GaN and the two-dimensional hole gas (2DHG) at the p-GaN/AlGaN interface, and both substantially contribute to the lateral p-type conduction at room temperature. Their complementary temperature responses lead to conductivity enhancement at both high- and low-temperature regimes. The high-density (1.2 × 1013 cm−2) 2DHG is formed owing to the polarization-induced potential well and the ionization of the Mg acceptors that thermally diffused into the barrier during the epi-growth. Such ionized Mg acceptors would partially deplete the two-dimensional electron gas (2DEG) at the access region in the n-channel side where the p-GaN is removed and result in a trade-off between the carrier density of 2DHG and 2DEG.
中文翻译:
p-GaN/AlGaN/GaN异质结构中空穴的分布和传输
p-GaN/AlGaN/GaN异质结构主要在大规模硅片上外延生长,已广泛用于生产消费类功率开关器件,并且最近表现出有利于开发基于GaN的互补器件和电路。这项工作基于宽温范围 (20–600 K) 霍尔测量和 TCAD 模拟,研究了该结构中的空穴分布和传输。结果表明,其p沟道由p-GaN中的体空穴和p-GaN/AlGaN界面处的二维空穴气(2DHG)组成,两者对横向p型传导有显着贡献。在室温下。它们互补的温度响应导致高温和低温条件下的电导率增强。高密度(1. 2 × 1013 cm−2) 2DHG 是由于极化引起的势阱和外延生长过程中热扩散到势垒中的 Mg 受体的电离而形成的。这种电离的镁受体将部分耗尽n沟道侧接入区的二维电子气(2DEG),其中p-GaN被去除,并导致2DHG和2DEG的载流子密度之间的权衡。
更新日期:2023-10-04
中文翻译:
![](https://scdn.x-mol.com/jcss/images/paperTranslation.png)
p-GaN/AlGaN/GaN异质结构中空穴的分布和传输
p-GaN/AlGaN/GaN异质结构主要在大规模硅片上外延生长,已广泛用于生产消费类功率开关器件,并且最近表现出有利于开发基于GaN的互补器件和电路。这项工作基于宽温范围 (20–600 K) 霍尔测量和 TCAD 模拟,研究了该结构中的空穴分布和传输。结果表明,其p沟道由p-GaN中的体空穴和p-GaN/AlGaN界面处的二维空穴气(2DHG)组成,两者对横向p型传导有显着贡献。在室温下。它们互补的温度响应导致高温和低温条件下的电导率增强。高密度(1. 2 × 1013 cm−2) 2DHG 是由于极化引起的势阱和外延生长过程中热扩散到势垒中的 Mg 受体的电离而形成的。这种电离的镁受体将部分耗尽n沟道侧接入区的二维电子气(2DEG),其中p-GaN被去除,并导致2DHG和2DEG的载流子密度之间的权衡。