Spintronic terahertz (THz) emitters (STEs) based on magnetic heterostructures have emerged as promising THz sources. However, it is still a challenge to achieve a higher intensity STE to satisfy all kinds of practical applications. Herein, we report a STE based on Pt_0.93(MgO)_0.07/CoFeB nanofilm by introducing dispersed MgO impurities into Pt, which reaches a 200% intensity compared to Pt/CoFeB and approaches the signal of 500 μm ZnTe crystal under the same pump power. We obtain a smaller spin diffusion length of Pt_0.93(MgO)_0.07 and an increased thickness-dependent spin Hall angle relative to the undoped Pt. We also find that the thickness of a Pt layer leads to a drastic change in the interface role in the spintronic THz emission, suggesting that the underlying mechanism of THz emission enhancement is a combined effect of enhanced bulk spin hall angle and the interfacial skew scattering by MgO impurities. Our findings demonstrate a simple way to realize high-efficiency, stable, advanced spintronic THz devices.

基于磁性异质结构的自旋电子太赫兹（THz）发射器（STE）已成为有前途的太赫兹源。然而，实现更高强度的STE以满足各种实际应用仍然是一个挑战。在此，我们报道了一种基于 Pt _0.93 (MgO) _0.07 /CoFeB 纳米膜的 STE，通过将分散的 MgO 杂质引入到 Pt 中，与 Pt/CoFeB 相比，其强度达到了 200%，并且在相同泵浦功率下接近 500 μm ZnTe 晶体的信号。我们得到了较小的自旋扩散长度 Pt _0.93 (MgO) _0.07相对于未掺杂的 Pt，厚度相关的自旋霍尔角增加。我们还发现，Pt 层的厚度会导致自旋电子太赫兹发射中界面作用的巨大变化，这表明太赫兹发射增强的潜在机制是增强的体自旋霍尔角和界面偏斜散射的综合作用。氧化镁杂质。我们的研究结果展示了一种实现高效、稳定、先进的自旋电子太赫兹器件的简单方法。