A photo-activated semiconductor gas sensor presents a promising strategy for detecting highly toxic nitrogen dioxide (NO₂) gases at room temperature. Near-infrared enhanced gas sensor may offer a new strategy for room-temperature NO₂ detection. In this work, MOF-based SnO₂/SnSe₂ heterostructures prepared by a solvothermal method were used to probe NO₂ gas at room temperature. Under near-infrared irradiation, the SnO₂/SnSe₂ sensor exhibits a response/recovery time of 23/7 s and a sensitivity value of 1500 for NO₂ at room temperature. In addition, the adsorption behavior between SnO₂/SnSe₂ and gas molecules was further studied by first-principles calculations. The optimization of the gas-sensing performance was explored by considering the photoexcited electrons and the heterostructure. This work highlights the potential of SnO₂/SnSe₂ heterostructures as high-performance NO₂ sensors operating at room temperature, as well as the enhanced activation effect of near-infrared irradiation on semiconductor gas sensors.

光激活半导体气体传感器提出了一种在室温下检测剧毒二氧化氮（NO _{2 ）气体的有前途的策略。}近红外增强型气体传感器可能为室温NO ₂检测提供新策略。本工作采用溶剂热法制备的MOF基SnO ₂ /SnSe _{2异质结构}用于在室温下探测NO _2气体。在近红外照射下，SnO ₂ /SnSe _2传感器在室温下表现出23/7 s的响应/恢复时间和1500的NO _{2灵敏度值。}此外，SnO ₂ /SnSe之间的吸附行为通过第一性原理计算进一步研究了_{2和气体分子。}通过考虑光生电子和异质结构，探索了气敏性能的优化。_{这项工作突出了SnO 2} /SnSe ₂异质结构作为室温下运行的高性能NO ₂传感器的潜力，以及近红外辐射对半导体气体传感器的增强激活效应。