Enhancing the Emission Rate of the Inherent Silicon-Vacancy Center Using Optimized Multipolar Moments in a Silicon Carbide Metasurface,Advanced Quantum Technologies

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Enhancing the Emission Rate of the Inherent Silicon-Vacancy Center Using Optimized Multipolar Moments in a Silicon Carbide Metasurface
Advanced Quantum Technologies ( IF 4.4 ) Pub Date : 2023-09-25 , DOI: 10.1002/qute.202300123
Vivek Vashist ₁ , Megha Khokhar ₁ , Faraz A. Inam ₂ , Rajesh V. Nair ₁

Affiliation

Silicon carbide (SiC) hosts various color centers with emission lines from visible to near-infrared, with promising applications in quantum communication. Metasurfaces made using SiC can enhance the emission rate of inherent color centers to achieve on-demand single photon emission with a high emission rate. This is possible by engineering the amplitude and phase of the excited multipolar scattering moments in metasurfaces. The numerical simulations and analytical calculations are used to study the emission rate enhancement from an embedded single silicon vacancy (

V_{S i}^{-} $V_{Si}^ - $

) center in SiC metasurface. The optimized metasurface balances multipolar moments at the zero-phonon line wavelength of 862 nm with 40 times field intensity confinement. The confinement provides substantial emission rate enhancement for the

V_{S i}^{-} $V_{Si}^ - $

center, making it a bright single photon emitter at 862 nm. The significant emission enhancement offers new insights into the metasurface to achieve on-demand single-photon sources and efficient spin–photon interfaces.

中文翻译：

利用碳化硅超表面中优化的多极矩提高固有硅空位中心的发射率

碳化硅 (SiC) 具有多种色心，发射线从可见光到近红外，在量子通信中具有广阔的应用前景。使用SiC制成的超表面可以增强固有色心的发射率，从而实现高发射率的按需单光子发射。这可以通过设计超表面中激发的多极散射矩的振幅和相位来实现。数值模拟和分析计算用于研究嵌入式单硅空位的发射率增强（