We synthesized a CaZrO₃/SrTiO₃ oxide heterostructure, which can serve as an alternative to LaAlO₃/SrTiO₃, and confirmed the generation of 2-dimensional electron gas (2-DEG) at the heterointerface. We analyzed the electrical-transport properties of the 2-DEG to elucidate its intrinsic characteristics. Based on the magnetic field dependence of resistance at 2 K, which exhibited Weak Anti-localization (WAL) behaviors, the fitted Rashba parameter values were found to be about 12–15 × 10^–12 eV*m. These values are stronger than the previous reported Rashba parameters obtained from the 2-DEGs in other heterostructure systems and several layered 2D materials. The observed strong spin–orbit coupling (SOC) is attributed to the strong internal electric field generated by the lattice mismatch between the CaZrO₃ layer and SrTiO₃ substrate. This pioneering strong SOC of the 2-DEG at the CaZrO₃/SrTiO₃ heterointerface may play a pivotal role in the developing future metal oxide-based quantum nanoelectronics devices.

我们合成了CaZrO ₃ /SrTiO ₃氧化物异质结构，可以作为LaAlO ₃ /SrTiO ₃的替代品，并证实在异质界面处产生二维电子气（2-DEG）。我们分析了 2-DEG 的电传输特性，以阐明其内在特征。基于 2 K 时电阻的磁场依赖性，表现出弱反定位 (WAL) 行为，发现拟合的 Rashba 参数值约为 12–15 × 10 –12 ^eV  *m。这些值比之前报道的从其他异质结构系统和几种层状二维材料中的 2-DEG 获得的 Rashba 参数更强。观察到的强自旋轨道耦合（SOC）归因于CaZrO ₃层和SrTiO ₃基底之间的晶格失配产生的强内电场。_{CaZrO 3} /SrTiO ₃异质界面上的这种开创性的强 2-DEG SOC可能在开发未来基于金属氧化物的量子纳米电子器件中发挥关键作用。