In this work, the characteristics of the gallium oxide (Ga₂O₃)/diamond heterostructure were thoroughly examined after the preparation of Ga₂O₃ thin film on bulk diamond via atomic layer deposition. The X-ray diffraction (XRD) analysis revealed the Ga₂O₃ film amorphous and diamond polycrystalline. The atomic force microscopy (AFM) mapping displayed remarkably smooth surfaces of the Ga₂O₃ film and diamond substrate (RMS of 0.184 and 0.508 nm, respectively). The scanning electron microscopy (SEM) images showed conspicuous grains formed on the diamond, and small crystallites on the surface of the film. The optical characteristics were investigated via spectroscopic ellipsometry (SE) and UV/Vis/NIR spectrophotometer. Raman spectroscopy suggested a sharp diamond-related (sp³) peak and an extremely weak bulge band around 1350–1620 cm⁻¹. X-ray photoelectron spectroscopy (XPS) analysis indicated Ga₂O₃/diamond heterojunction to be staggered (type II) band alignment with valence band and conduction band offsets of around 1.18 eV and 2.09 eV, respectively. Moreover, according to time-domain thermoreflectance (TDTR) measurements, the thermal conductivity of Ga₂O₃ and the thermal boundary conductivity of the heterointerface were 5.13 W/(m·K) and 19.22 MW/(m²·K), respectively. These findings not only demonstrate the feasibility of Ga₂O₃-on-diamond hetero-integration but open up new prospects for the design and physical analysis of Ga₂O₃/diamond-based devices in the future.

在这项工作中，通过原子层沉积在块状金刚石上制备Ga ₂ O ₃薄膜后，对氧化镓(Ga ₂ O ₃ )/金刚石异质结构的特性进行了彻底的研究。X射线衍射(XRD)分析表明Ga ₂ O ₃薄膜为非晶态和金刚石多晶。原子力显微镜 (AFM) 绘图显示 Ga ₂ O _{3的表面非常光滑}薄膜和金刚石基底（RMS 分别为 0.184 和 0.508 nm）。扫描电子显微镜 (SEM) 图像显示金刚石上形成了明显的晶粒，薄膜表面上有小微晶。通过椭圆偏振光谱仪（SE）和紫外/可见/近红外分光光度计研究了光学特性。^{拉曼光谱表明在 1350–1620 cm -1}附近存在尖锐的钻石相关 (sp ³ ) 峰和极弱的凸出带。X射线光电子能谱（XPS）分析表明为Ga ₂ O ₃/金刚石异质结交错（II型）能带排列，价带和导带偏移分别约为1.18 eV和2.09 eV。此外，根据时域热反射(TDTR)测量，Ga ₂ O ₃的导热系数和异质界面的热边界导热系数分别为5.13 W/(m·K)和19.22 MW/(m ² ·K)。 。这些发现不仅证明了Ga ₂ O ₃ -金刚石异质集成的可行性，而且为未来Ga ₂ O _{3 /金刚石基器件的设计和物理分析开辟了新的前景。}