In the last decade, the combination of two or more semiconductors with different dimensionality to improve the performance of optical devices has become widespread. Graphdiyne, a recently emerged interesting 2D semiconductor with its sp-sp2 structure and elastic band gap, is still being explored by researchers in various fields, especially in optoelectronic devices. The van der Waals heterojunctions of graphdiyne with zero-dimensional photosensitizers such as quantum dots could be a great candidate for novel photodetectors. In this work, we constructed a simple and highly sensitive phototransistor by implementing graphdiyne as the charge carrier layer and graphdiyne quantum dots as the photosensitizer layer. The photoresponsivity of the proposed heterostructure was measured to be 4403.6A/W, which is 4.45 times higher than pristine GDY. Compared to pure GDY with an on/off ratio and mobility of (0.131 ± 0.011) _˟ 10³ and (1.77 ± 0.085) _˟ 10⁻² cm²/V s, respectively., the GDY/GQD heterostructure exhibited an on/off ratio and mobility of (1.5 ± 0.03) _˟ 10⁴, (3.3 ± 0.06) _˟ 10⁻² cm²/Vs, respectively. The proposed heterostructure device responded 2.22 times faster to light irradiation and exhibited 12.5 times faster decay time. The obtained data demonstrate the applicability of our design and its potential for building GDY/GQD heterojunctions based on phototransistors.

在过去的十年中，结合两种或多种不同维度的半导体来提高光学器件的性能已变得普遍。Graphdiyne是最近出现的一种有趣的二维半导体，具有sp-sp2结构和弹性带隙，仍在被各个领域的研究人员探索，特别是在光电器件领域。石墨炔与量子点等零维光敏剂的范德华异质结可能是新型光电探测器的绝佳候选者。在这项工作中，我们通过使用石墨二炔作为载流子层和石墨二炔量子点作为光敏剂层构建了一种简单且高灵敏度的光电晶体管。所提出的异质结构的光响应度经测量为 4403.6A/W，比原始 GDY 高 4.45 倍。_分别为˟ 10 ³和(1.77 ± 0.085) _˟ 10 ⁻²  cm ² /V s，GDY/GQD 异质结构的开关比和迁移率分别为(1.5 ± 0.03) _˟ 10 ⁴、(3.3 ± 0.06)分别为_˟ 10 ⁻²  cm ² /Vs。所提出的异质结构器件对光照射的响应速度快了 2.22 倍，衰减时间快了 12.5 倍。获得的数据证明了我们的设计的适用性及其构建基于光电晶体管的 GDY/GQD 异质结的潜力。