具有超薄 MoS2/WSe2/MoS2 异质结的高度非线性存储器选择器,Advanced Functional Materials

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具有超薄 MoS2/WSe2/MoS2 异质结的高度非线性存储器选择器
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-09-17 , DOI: 10.1002/adfm.202304242
Hongye Chen _{1,

2} , Tianqing Wan ₂ , Yue Zhou ₂ , Jianmin Yan ₂ , Changsheng Chen ₂ , Zhihang Xu ₂ , Songge Zhang ₂ , Ye Zhu ₂ , Hongyu Yu ₁ , Yang Chai ₂

Affiliation

电阻式随机存取存储器 (RRAM) 交叉阵列需要具有高电流密度的高度非线性选择器来寻址特定存储单元并抑制通过未选择单元的泄漏电流。 RRAM 阵列的 3D 单片集成需要具有小占用空间和低温处理能力的选择器器件，以实现超高密度数据存储。这里，通过低温转移方法设计了具有二维过渡金属二硫属化物（TMD）的超薄两端npn选择器。转移的 Au 电极和 TMD 之间的范德华接触减少了费米能级钉扎并保留了 TMD 的固有传输行为。具有单一类型 TMD 的选择器根据势垒高度在电流密度和非线性之间进行权衡。通过调节肖特基势垒高度并控制MoS ₂ /WSe ₂ /MoS _{2 npn 选择器中 p 型 WSe}₂的厚度以实现穿通传输，该选择器表现出高非线性度 (≈ 230) 和高电流密度 (2 × 10 ³ A cm ^-2 ) 同时。 npn选择器进一步与双极六方氮化硼存储器集成，并根据10%的读取余量计算基于2D材料的单选择器单电阻的最大纵横尺寸，这为未来3D单片集成的实现提供了可能。

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Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low-temperature processing for ultrahigh-density data storage. Here, an ultrathin two-terminal n-p-n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low-temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade-off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p-type WSe₂ in MoS₂/WSe₂/MoS₂ n-p-n selector for a punch-through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 10³ A cm⁻²) simultaneously. The n-p-n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material-based one-selector one-resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.

更新日期：2023-09-17

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