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Direct Z-Scheme Heterostructure of Vertically Oriented SnS2 Nanosheet on BiVO4 Nanoflower for Self-Powered Photodetectors and Water Splitting
Small ( IF 13.0 ) Pub Date : 2023-09-13 , DOI: 10.1002/smll.202304839 Nan Ma 1 , Chunhui Lu 1 , Yuqi Liu 1 , Taotao Han 1 , Wen Dong 1 , Dan Wu 1 , Xinlong Xu 1
Small ( IF 13.0 ) Pub Date : 2023-09-13 , DOI: 10.1002/smll.202304839 Nan Ma 1 , Chunhui Lu 1 , Yuqi Liu 1 , Taotao Han 1 , Wen Dong 1 , Dan Wu 1 , Xinlong Xu 1
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The construction of nanostructured Z-scheme heterostructure is a powerful strategy for realizing high-performance photoelectrochemical (PEC) devices such as self-powered photodetectors and water splitting. Considering the band structure and internal electric field direction, BiVO4 is a promising candidate to construct SnS2-based heterostructure. Herein, the direct Z-scheme heterostructure of vertically oriented SnS2 nanosheet on BiVO4 nanoflower is rationally fabricated for efficient self-powered PEC photodetectors. The Z-scheme heterostructure is identified by ultraviolet photoelectron spectroscopy, photoluminescence spectroscopy, PEC measurement, and water splitting. The SnS2/BiVO4 heterostructure shows a superior photodetection performance such as excellent photoresponsivity (10.43 mA W−1), fast response time (6 ms), and long-term stability. Additionally, by virtue of efficient Z-scheme charge transfer and unique light-trapping nanostructure, the SnS2/BiVO4 heterostructure also displays a remarkable photocatalytic hydrogen production rate of 54.3 µmol cm−2 h−1 in Na2SO3 electrolyte. Furthermore, the synergistic effect between photo-activation and bias voltage further improves the PEC hydrogen production rate of 360 µmol cm−2 h−1 at 0.8 V, which is an order of magnitude above the BiVO4. The results provide useful inspiration for designing direct Z-scheme heterostructures with special nanostructured morphology to signally promote the performance of PEC devices.
中文翻译：
BiVO4 纳米花上垂直取向 SnS2 纳米片的直接 Z 型异质结构，用于自供电光电探测器和水分解
纳米结构Z型异质结构的构建是实现自供电光电探测器和水分解等高性能光电化学（PEC）器件的有力策略。考虑到能带结构和内部电场方向，BiVO 4是构建SnS 2基异质结构的有希望的候选者。在此，BiVO 4纳米花上垂直取向的SnS 2纳米片的直接Z型异质结构被合理地制造用于高效的自供电PEC光电探测器。 Z型异质结构通过紫外光电子能谱、光致发光光谱、PEC测量和水分解来鉴定。 SnS 2 /BiVO 4异质结构表现出优异的光电检测性能，例如优异的光响应性（10.43 mA W -1 ）、快速响应时间（6 ms）和长期稳定性。此外，凭借高效的Z型电荷转移和独特的光捕获纳米结构，SnS 2 /BiVO 4异质结构还在Na 2 SO 3电解质中表现出54.3 µmol cm -2 h -1的显着光催化产氢速率。此外，光活化和偏压之间的协同效应进一步提高了0.8 V下360 µmol cm -2 h -1的PEC产氢速率，比BiVO 4高出一个数量级。研究结果为设计具有特殊纳米结构形态的直接Z型异质结构提供了有用的启发，从而显着提高PEC器件的性能。
更新日期：2023-09-13
中文翻译：
BiVO4 纳米花上垂直取向 SnS2 纳米片的直接 Z 型异质结构，用于自供电光电探测器和水分解
纳米结构Z型异质结构的构建是实现自供电光电探测器和水分解等高性能光电化学（PEC）器件的有力策略。考虑到能带结构和内部电场方向，BiVO 4是构建SnS 2基异质结构的有希望的候选者。在此，BiVO 4纳米花上垂直取向的SnS 2纳米片的直接Z型异质结构被合理地制造用于高效的自供电PEC光电探测器。 Z型异质结构通过紫外光电子能谱、光致发光光谱、PEC测量和水分解来鉴定。 SnS 2 /BiVO 4异质结构表现出优异的光电检测性能，例如优异的光响应性（10.43 mA W -1 ）、快速响应时间（6 ms）和长期稳定性。此外，凭借高效的Z型电荷转移和独特的光捕获纳米结构，SnS 2 /BiVO 4异质结构还在Na 2 SO 3电解质中表现出54.3 µmol cm -2 h -1的显着光催化产氢速率。此外，光活化和偏压之间的协同效应进一步提高了0.8 V下360 µmol cm -2 h -1的PEC产氢速率，比BiVO 4高出一个数量级。研究结果为设计具有特殊纳米结构形态的直接Z型异质结构提供了有用的启发，从而显着提高PEC器件的性能。
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