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Improved dielectric properties of poly(arylene ether nitrile) with sulfonated poly(arylene ether nitrile) modified CaCu3Ti4O12
Polymer Composites ( IF 4.8 ) Pub Date : 2023-09-07 , DOI: 10.1002/pc.27727 Feng Gao 1 , Renbo Wei 1 , Lingyun Zhou 1 , Wei Luo 1 , Zhiqiang Li 1 , Lingyun Pang 1 , Shuang Li 1 , Xiufu Hua 2 , Lingling Wang 1
Polymer Composites ( IF 4.8 ) Pub Date : 2023-09-07 , DOI: 10.1002/pc.27727 Feng Gao 1 , Renbo Wei 1 , Lingyun Zhou 1 , Wei Luo 1 , Zhiqiang Li 1 , Lingyun Pang 1 , Shuang Li 1 , Xiufu Hua 2 , Lingling Wang 1
Affiliation
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High-dielectric and low-loss materials hold potential for various electronic devices. A prevalent approach to producing high-dielectric and low-loss dielectrics is incorporating inorganic ceramic materials with high dielectric constants into a polymeric matrix. However, doping of inorganic ceramic materials results in agglomeration of the inorganic materials and poor interfacial compatibility between the matrix and the dopant, thus limiting their range of application. In this study, sulfonated poly(arylene ether nitrile) (SPEN) functionalized copper calcium titanate (CCTO) (SPEN@CCTO) was synthesized by modifying hydroxylated CCTO with SPEN and then introduced into the PEN matrix offering SPEN@CCTO/PEN. The successful encapsulation of SPEN at CCTO was confirmed through FT-IR, XRD, and XPS. SEM observation revealed that SPEN@CCTO nanomaterials not only prevented agglomeration of CCTO but also significantly improved interfacial adhesion between the matrix and filler, highlighting the importance of SPEN@CCTO in enhancing the mechanical properties of resulting nanocomposites. Electrostatic permittivity of SPEN@CCTO/PEN and CCTO/PEN composite dielectric materials were evaluated in the frequency range spanning 10 Hz to 1 MHz. In comparison with CCTO/PEN composite dielectric materials, SPEN@CCTO/PEN composites show superior dielectric characteristics, characterized by higher dielectric constants and lower losses in dielectric. The SPEN@CCTO/PEN film's dielectric constant at 10 Hz and electric breakdown strength with 15 wt% SPEN@CCTO were found to be 5.9 and 178.8 kV/mm, respectively. Thereby, the energy storage density of SPEN@CCTO/PEN composite film was calculated to be 0.83 J/cm3. In addition, the excellent mechanical properties of SPEN@CCTO/PEN ensured it as promising flexible dielectric materials in the future.
中文翻译：
磺化聚芳醚腈改性 CaCu3Ti4O12 改善聚芳醚腈的介电性能
高介电和低损耗材料在各种电子设备中具有潜力。生产高介电常数和低损耗电介质的普遍方法是将具有高介电常数的无机陶瓷材料掺入聚合物基体中。然而，无机陶瓷材料的掺杂导致无机材料团聚以及基体与掺杂剂之间的界面相容性差，从而限制了其应用范围。在本研究中，通过用SPEN对羟基化CCTO进行改性，合成了磺化聚亚芳基醚腈（SPEN）功能化钛酸铜钙（CCTO）（SPEN@CCTO），然后将其引入到PEN基质中，形成SPEN@CCTO/PEN。通过 FT-IR、XRD 和 XPS 证实了 CCTO 中 SPEN 的成功封装。SEM观察表明，SPEN@CCTO纳米材料不仅可以防止CCTO的团聚，而且还显着提高了基体和填料之间的界面粘附力，凸显了SPEN@CCTO在增强纳米复合材料机械性能方面的重要性。在 10 Hz 至 1 MHz 的频率范围内评估了 SPEN@CCTO/PEN 和 CCTO/PEN 复合介电材料的静电介电常数。与CCTO/PEN复合介电材料相比，SPEN@CCTO/PEN复合材料表现出优异的介电特性，其特点是介电常数更高、介电损耗更低。SPEN@CCTO/PEN 薄膜在 10 Hz 时的介电常数和 15 wt% SPEN@CCTO 的电击穿强度分别为 5.9 和 178.8 kV/mm。由此计算出SPEN@CCTO/PEN复合膜的储能密度为0.83 J/cm 3。此外，SPEN@CCTO/PEN优异的机械性能确保其成为未来有前途的柔性介电材料。
更新日期：2023-09-07
中文翻译：
磺化聚芳醚腈改性 CaCu3Ti4O12 改善聚芳醚腈的介电性能
高介电和低损耗材料在各种电子设备中具有潜力。生产高介电常数和低损耗电介质的普遍方法是将具有高介电常数的无机陶瓷材料掺入聚合物基体中。然而，无机陶瓷材料的掺杂导致无机材料团聚以及基体与掺杂剂之间的界面相容性差，从而限制了其应用范围。在本研究中，通过用SPEN对羟基化CCTO进行改性，合成了磺化聚亚芳基醚腈（SPEN）功能化钛酸铜钙（CCTO）（SPEN@CCTO），然后将其引入到PEN基质中，形成SPEN@CCTO/PEN。通过 FT-IR、XRD 和 XPS 证实了 CCTO 中 SPEN 的成功封装。SEM观察表明，SPEN@CCTO纳米材料不仅可以防止CCTO的团聚，而且还显着提高了基体和填料之间的界面粘附力，凸显了SPEN@CCTO在增强纳米复合材料机械性能方面的重要性。在 10 Hz 至 1 MHz 的频率范围内评估了 SPEN@CCTO/PEN 和 CCTO/PEN 复合介电材料的静电介电常数。与CCTO/PEN复合介电材料相比，SPEN@CCTO/PEN复合材料表现出优异的介电特性，其特点是介电常数更高、介电损耗更低。SPEN@CCTO/PEN 薄膜在 10 Hz 时的介电常数和 15 wt% SPEN@CCTO 的电击穿强度分别为 5.9 和 178.8 kV/mm。由此计算出SPEN@CCTO/PEN复合膜的储能密度为0.83 J/cm 3。此外，SPEN@CCTO/PEN优异的机械性能确保其成为未来有前途的柔性介电材料。
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